Semiconductor device and method for manufacturing semiconductor device

ABSTRACT

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

TECHNICAL FIELD

The invention disclosed in this specification and the like relates to asemiconductor device and a method for manufacturing the semiconductordevice.

In this specification and the like, a “semiconductor device” generallyrefers to a device which can function by utilizing semiconductorcharacteristics: an electro-optical device, an image display device, asemiconductor circuit, and an electronic device are all semiconductordevices.

BACKGROUND ART

A technique by which transistors are formed using semiconductor thinfilms formed over a substrate having an insulating surface has beenattracting attention. Such transistors are applied to a wide range ofelectronic devices such as integrated circuits (IC) and image displaydevices (also simply referred to as display devices). A silicon-basedsemiconductor material is widely known as a material for a semiconductorthin film applicable to a transistor. As another material, an oxidesemiconductor has been attracting attention.

For example, a technique for forming a transistor using zinc oxide or anIn—Ga—Zn-based oxide semiconductor as an oxide semiconductor isdisclosed (see Patent Document 1).

REFERENCE Patent Document

[Patent Document 1] Japanese Published Patent Application No.2006-165528

DISCLOSURE OF INVENTION

For example, in the case where a semiconductor device (e.g., a liquidcrystal panel) is manufactured using a transistor including an oxidesemiconductor, it is necessary to provide an interlayer insulating filmover the transistor including an oxide semiconductor.

The interlayer insulating film is a very important factor not only forinsulation between the transistor and a wiring or between wirings, butalso for stabilization of characteristics of the transistor.

Thus, an object of the present invention is to suppress a change inelectrical characteristics of a semiconductor device in which aninterlayer insulating film is provided over a transistor including anoxide semiconductor.

One embodiment of the present invention is a structure including a voidportion in a first insulating film, in a step region formed by a sourceelectrode and a drain electrode over a semiconductor film, the firstinsulating film containing silicon oxide as a component, and a secondinsulating film containing silicon nitride as a component, the secondinsulating film being provided in contact with the first insulating filmto cover the void portion in the first insulating film. The structurecan prevent the void portion generated in the first insulating film fromexpanding outward. Specifically, the following structure can be employedfor example.

One embodiment of the present invention is a semiconductor deviceincluding a semiconductor film at least partly overlapping with a gateelectrode with a gate insulating film interposed therebetween, a sourceelectrode and a drain electrode each including a region in contact withpart of a top surface portion of the semiconductor film, a firstinsulating film containing silicon oxide as a component, which coversthe source electrode, the drain electrode, and the semiconductor filmand includes a void portion in a step portion formed by the sourceelectrode and the drain electrode over the semiconductor film, and asecond insulating film containing silicon nitride as a component, whichis provided in contact with the first insulating film to cover the voidportion in the first insulating film.

Another embodiment of the present invention is a semiconductor deviceincluding a semiconductor film, a source electrode and a drain electrodeeach including a region in contact with part of a top surface portion ofthe semiconductor film, a first insulating film containing silicon oxideas a component, which covers the source electrode, the drain electrode,and the semiconductor film and includes a void portion in a step portionformed by the source electrode and the drain electrode over thesemiconductor film, a second insulating film containing silicon nitrideas a component, which is provided in contact with the first insulatingfilm to cover the void portion in the first insulating film, and a gateelectrode overlapping with the semiconductor film with the secondinsulating film interposed therebetween.

Another embodiment of the present invention is a semiconductor devicewith the above structure, in which the source electrode and the drainelectrode each have a stacked structure including a first conductivefilm in contact with the semiconductor film and a second conductive filmover the first conductive film, and a side end surface of the secondconductive film is positioned on a top surface of the first conductivefilm.

Another embodiment of the present invention is a semiconductor devicewith the above structure, in which the film density of the firstinsulating film is preferably higher than or equal to 2.26 g/cm³ andlower than or equal to 2.50 g/cm³.

Another embodiment of the present invention is a semiconductor devicewith the above structure, in which it is preferable that the firstinsulating film be a silicon oxynitride film and the second insulatingfilm be a silicon nitride film.

Another embodiment of the present invention is a semiconductor devicewith the above structure, in which the thickness of the first insulatingfilm is larger than the thickness of the second insulating film.

Another embodiment of the present invention is a semiconductor devicewith the above structure, in which the semiconductor film is preferablyan oxide semiconductor film.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the steps of forming asemiconductor film at least partly overlapping with a gate electrodewith a gate insulating film interposed therebetween, forming a sourceelectrode and a drain electrode each including a region in contact withpart of a top surface portion of the semiconductor film, forming a firstinsulating film containing silicon oxide as a component, which coversthe source electrode, the drain electrode, and the semiconductor filmand includes a void portion in a step portion formed by the sourceelectrode and the drain electrode over the semiconductor film, andforming a second insulating film containing silicon nitride as acomponent to be in contact with the first insulating film to cover thevoid portion in the first insulating film.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the steps of forming asemiconductor film, forming a source electrode and a drain electrodeeach including a region in contact with part of a top surface portion ofthe semiconductor film, forming a first insulating film containingsilicon oxide as a component, which covers the source electrode, thedrain electrode, and the semiconductor film and includes a void portionin a step portion formed by the source electrode and the drain electrodeover the semiconductor film, forming a second insulating film containingsilicon nitride as a component to be in contact with the firstinsulating film to cover the void portion in the first insulating film,and forming a gate electrode overlapping with the semiconductor filmwith the second insulating film interposed therebetween.

Another embodiment of the present invention is a method formanufacturing a semiconductor device with the above structure, in whichthe source electrode and the drain electrode each have a stackedstructure including a first conductive film in contact with thesemiconductor film and a second conductive film over the firstconductive film, etching treatment is performed on the first conductivefilm and the second conductive film, and a side end surface of thesecond conductive film is positioned on a top surface of the firstconductive film by the etching treatment.

Another embodiment of the present invention is a method formanufacturing a semiconductor device with the above structure, in whichthe film density of the first insulating film is preferably higher thanor equal to 2.26 g/cm³ and lower than or equal to 2.50 g/cm³.

Another embodiment of the present invention is a method formanufacturing a semiconductor device with the above structure, in whichit is preferable that the first insulating film be a silicon oxynitridefilm and the second insulating film be a silicon nitride film.

Another embodiment of the present invention is a method formanufacturing a semiconductor device with the above structure, in whichthe thickness of the first insulating film is larger than the thicknessof the second insulating film.

Another embodiment of the present invention is a method formanufacturing a semiconductor device with the above structure, in whichthe semiconductor film is preferably an oxide semiconductor film.

With one embodiment of the present invention, a semiconductor devicewith high reliability, in which a change in electrical characteristicsis suppressed, can be provided.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device;

FIGS. 2A to 2C illustrate an example of a method for manufacturing asemiconductor device;

FIGS. 3A to 3C illustrate an example of a method for manufacturing asemiconductor device;

FIGS. 4A and 4B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device;

FIGS. 5A to 5C illustrate an example of a method for manufacturing asemiconductor device;

FIGS. 6A to 6D illustrate an example of a method for manufacturing asemiconductor device;

FIGS. 7A to 7C are cross-sectional views each illustrating oneembodiment of a semiconductor device;

FIGS. 8A to 8C are cross-sectional views illustrating a process ofgenerating a void portion;

FIGS. 9A to 9C are cross-sectional views each illustrating oneembodiment of a display device;

FIGS. 10A and 10B are cross-sectional views each illustrating oneembodiment of a display device;

FIG. 11 is a cross-sectional view illustrating one embodiment of adisplay device;

FIGS. 12A to 12C illustrate one embodiment of a display device;

FIGS. 13A and 13B illustrate one embodiment of a semiconductor device;

FIGS. 14A to 14C each illustrate an electronic device;

FIGS. 15A to 15C illustrate an electronic device;

FIGS. 16A and 16B show STEM images of example samples in Example;

FIGS. 17A and 17B show STEM images of example samples in Example;

FIGS. 18A and 18B show STEM images of example samples in Example;

FIGS. 19A and 19B show electrical characteristics of example samples inExample;

FIGS. 20A1 to 20A3 and FIGS. 20B1 to 20B3 show electricalcharacteristics of example samples in Example;

FIG. 21 shows an example sample in Example;

FIGS. 22A and 22B show SIMS data of example samples in Example;

FIGS. 23A and 23B illustrate example samples in Example;

FIGS. 24A and 24B show SIMS data of example samples in Example;

FIGS. 25A to 25D are model diagrams showing movement of nitrogen,hydrogen, and water which is generated by heat treatment in an oxideinsulating film containing nitrogen;

FIGS. 26A to 26E are model diagrams showing movement of nitrogen,hydrogen, and water which is generated by heat treatment in an oxidesemiconductor film; and

FIGS. 27A to 27C are model diagrams showing a change in oxygen vacanciesby heating in an oxide semiconductor film.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention are described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that modes and details ofthe present invention can be modified in various ways without departingfrom the spirit and scope of the present invention. Accordingly, thepresent invention should not be construed as being limited to thedescription of the embodiments below.

Note that the functions of the “source” and “drain” may replace eachother in the case, for example, where transistors of differentconductivity types are used, or where the direction of a current flowchanges in a circuit operation. Therefore, the terms “source” and“drain” can replace each other in this specification.

The meaning of “electrically connected” includes “connected through anobject having any electric function”. The “object having any electricfunction” may be any object which allows electric signals to betransmitted and received between the components connected through theobject.

The position, size, and area of each component in the drawings and thelike are not accurately represented in some cases to facilitateunderstanding, and thus are not necessarily limited to those in thedrawings and the like in the disclosed invention.

The ordinal number such as “first”, “second”, and “third” are used toavoid confusion among components.

In this specification, a term “parallel” indicates that the angle formedbetween two straight lines is greater than or equal to −10° and lessthan or equal to 10°, and accordingly also includes the case where theangle is greater than or equal to −5° and less than or equal to 5°. Inaddition, a term “perpendicular” indicates that the angle formed betweentwo straight lines is greater than or equal to 80° and less than orequal to 100°, and accordingly includes the case where the angle isgreater than or equal to 85° and less than or equal to 95°.

In this specification, the trigonal and rhombohedral crystal systems areincluded in the hexagonal crystal system.

Embodiment 1

In this embodiment, a semiconductor device which is one embodiment ofthe present invention is described with reference to drawings. FIGS. 1Aand 1B show a top view and a cross-sectional view of a transistor 450that is a semiconductor device of one embodiment of the presentinvention. FIG. 1A shows the top view of the transistor 450, and FIG. 1Bshows the cross-sectional view taken along dashed-dotted line A-B inFIG. 1A.

The transistor 450 in FIGS. 1A and 1B includes a gate electrode 402provided over a substrate 400 having an insulating surface, a gateinsulating film 404 provided over the gate electrode 402, asemiconductor film 406 which is provided over the gate insulating film404 and overlaps with the gate electrode 402, and a source electrode 408a and a drain electrode 408 b which are provided over the semiconductorfilm 406. Further, an insulating film 412 which covers the sourceelectrode 408 a and the drain electrode 408 b and is in contact with thesemiconductor film 406 may be included in the transistor 450 as acomponent. In addition, an interlayer insulating film 414 covering theinsulating film 412 is provided, and an electrode 416 which iselectrically connected to the drain electrode 408 b through an openingformed in the insulating film 412 and the interlayer insulating film 414is provided over the interlayer insulating film 414. Note that in thisembodiment, the electrode 416 is electrically connected to the drainelectrode 408 b; however, the present invention is not limited thereto,and the electrode 416 may be electrically connected to the sourceelectrode 408 a.

In this embodiment, the gate insulating film 404 is a stack of a gateinsulating film 404 a which is in contact with the gate electrode 402and a gate insulating film 404 b which is in contact with the gateinsulating film 404 a and the semiconductor film 406. The insulatingfilm 412 is a stack of an oxide insulating film 410 which is a firstinsulating film in contact with the semiconductor film 406, the sourceelectrode 408 a, and the drain electrode 408 b and a nitride insulatingfilm 411 over the oxide insulating film 410, which is a secondinsulating film functioning as a protective film. The oxide insulatingfilm 410 is a stack of an oxide insulating film 410 a which is incontact with the semiconductor film 406, the source electrode 408 a, andthe drain electrode 408 b, formed under a low power condition, and hashigh coverage and an oxide insulating film 410 b over the oxideinsulating film 410 a.

Void portions 413 due to steps of the side end surfaces of the sourceelectrode 408 a and the drain electrode 408 b are generated in portionsof the oxide insulating film 410 which cover the steps. The void portion413 has a lower dielectric constant than a film in which the voidportion 413 is formed; thus, capacitance generated between wirings dueto miniaturization of a semiconductor device can be reduced, so that thesemiconductor device can operate at high speed while high degree ofintegration is kept. Although moisture might enter the semiconductorfilm 406 through the void portion 413 and characteristics of thetransistor 450 might be adversely affected, the nitride insulating film411 is provided over the oxide insulating film 410, whereby a voidportion generated in the oxide insulating film 410 can be covered.

When the void portion 413 is covered with the nitride insulating film411, the void portion 413 can be prevented from expanding to the outsideof the oxide insulating film 410. Alternatively, the void portion 413may be filled with the nitride insulating film 411. Further, the nitrideinsulating film 411 functions as a barrier film which suppresses entryof hydrogen or a compound containing hydrogen (e.g., water) from theoutside or the interlayer insulating film 414 formed later to thesemiconductor film 406.

Next, a method for manufacturing the transistor 450 is described withreference to FIGS. 2A to 2C and FIGS. 3A to 3C.

First, the gate electrode 402 (including a wiring formed with the samelayer) is formed over the substrate 400 having an insulating surface.

There is no particular limitation on the substrate that can be used asthe substrate 400 having an insulating surface as long as it has heatresistance high enough to withstand heat treatment performed later. Forexample, a glass substrate such as barium borosilicate glass oraluminoborosilicate glass, a ceramic substrate, a quartz substrate, asapphire substrate, or the like can be used. Alternatively, a singlecrystal semiconductor substrate or a polycrystalline semiconductorsubstrate made of silicon, silicon carbide, or the like, a compoundsemiconductor substrate made of silicon germanium or the like, an SOIsubstrate, or the like may be used as the substrate 400. Stillalternatively, any of these substrates further provided with asemiconductor element may be used as the substrate 400.

The gate electrode 402 can be formed using a metal material such asmolybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium,neodymium, or scandium or an alloy material which contains any of thesematerials as its main component. Alternatively, a semiconductor filmtypified by a polycrystalline silicon film doped with an impurityelement such as phosphorus, or a silicide film such as a nickel silicidefilm may be used as the gate electrode 402.

The material of the gate electrode 402 may be a conductive material suchas indium oxide-tin oxide, indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, indiumoxide-zinc oxide, or indium tin oxide to which silicon oxide is added.

Alternatively, as the material of the gate electrode 402, anIn—Ga—Zn-based oxide containing nitrogen, an In—Sn-based oxidecontaining nitrogen, an In—Ga-based oxide containing nitrogen, anIn—Zn-based oxide containing nitrogen, an Sn-based oxide containingnitrogen, an In-based oxide containing nitrogen, or a metal nitride film(such as an indium nitride film, a zinc nitride film, a tantalum nitridefilm, or a tungsten nitride film) may be used. These materials have awork function of 5 eV or more. Therefore, when the gate electrode 402 isformed using any of these materials, the threshold voltage can bepositive in the electrical characteristics of the transistor, so thatthe transistor can be a normally-off switching transistor. The gateelectrode 402 may have either a single-layer structure or astacked-layer structure, for example, in which copper is formed overtantalum nitride. The gate electrode 402 may have a tapered shape with ataper angle greater than or equal to 15° and less than or equal to 70°for example. Here, the taper angle refers to an angle formed between aside end surface of a layer having a tapered shape and a bottom surfaceof the layer.

Next, the gate insulating film 404 is formed so as to cover the gateelectrode 402 (see FIG. 2A). As the gate insulating film 404, a singlelayer or a stack of layers including at least one of the following filmsformed by a plasma CVD method, a sputtering method, or the like is used:a silicon oxide film, a silicon oxynitride film, a silicon nitride oxidefilm, a silicon nitride film, an aluminum oxide film, a hafnium oxidefilm, an yttrium oxide film, a zirconium oxide film, a gallium oxidefilm, a tantalum oxide film, a magnesium oxide film, a lanthanum oxidefilm, a cerium oxide film, and a neodymium oxide film. It is preferablethat microwave plasma treatment for repairing oxygen vacancies beperformed after the film formation of the gate insulating film 404, andthen radical oxidation treatment be performed.

Note that in this specification and the like, “oxynitride” such assilicon oxynitride contains more oxygen than nitrogen.

Further, in this specification and the like, “nitride oxide” such assilicon nitride oxide contains more nitrogen than oxygen.

Note that it is preferable that a region which is included in the gateinsulating film 404 and is in contact with the semiconductor film 406formed later (in this embodiment, the gate insulating film 404 b) beformed using an oxide insulating film.

Next, the semiconductor film 406 is formed over the gate insulating film404 (see FIG. 2B).

Any of an amorphous semiconductor film, a polycrystalline semiconductorfilm, and a microcrystalline semiconductor film may be used as thesemiconductor film 406. As a material of the amorphous semiconductorfilm, silicon, silicon-germanium (SiGe) alloy, or the like can be used.Further, an oxide semiconductor film can be used as the semiconductorfilm 406.

Then, a conductive film is formed over the semiconductor film 406 andprocessed by etching treatment to form the source electrode 408 a andthe drain electrode 408 b (including a wiring formed with the samelayer) (see FIG. 2C).

For the source electrode 408 a and the drain electrode 408 b, forexample, a conductive film containing an element selected from Al, Cr,Cu, Ta, Ti, Mo, and W, or a metal nitride film containing any of theabove elements as a component (a titanium nitride film, a molybdenumnitride film, or a tungsten nitride film) can be used. A conductive filmhaving a high melting point of Ti, Mo, W, or the like or a metal nitridefilm of any of these elements (a titanium nitride film, a molybdenumnitride film, or a tungsten nitride film) may be stacked on one of orboth a lower side and an upper side of a conductive film of Al, Cu, orthe like. Alternatively, the source electrode 408 a and the drainelectrode 408 b may be formed using a conductive metal oxide. As theconductive metal oxide, indium oxide (In₂O₃), tin oxide (SnO₂), zincoxide (ZnO), indium oxide-tin oxide (In₂O₃—SnO₂), an indium oxide-zincoxide (In₂O₃—ZnO), or any of these metal oxide materials in whichsilicon oxide is contained can be used.

For the source electrode 408 a and the drain electrode 408 b, a metalnitride film such as an In—Ga—Zn—O film containing nitrogen, an In—Sn—Ofilm containing nitrogen, an In—Ga—O film containing nitrogen, anIn—Zn—O film containing nitrogen, a Sn—O film containing nitrogen, or anIn—O film containing nitrogen can be used. Further, end portions of thesource electrode 408 a and the drain electrode 408 b preferably havetapered shapes. In this manner, coverage with the insulating film can beincreased and disconnection can be prevented. Here, the taper angle is,for example, greater than or equal to 30° and less than or equal to 70°,preferably, greater than or equal to 30° and less than or equal to 60°.

For example, in the case where the source electrode 408 a and the drainelectrode 408 b are formed to have a stacked-layer structure of aconductive film 407 a, a conductive film 407 b, and a conductive film407 c as illustrated in FIG. 8A in consideration of disadvantages ofinterface characteristics such as adhesion or conductivity of a film,when the stacked conductive films are processed by etching treatment,the etching rate varies depending on the kind of the conductive films.As a result, as illustrated in FIG. 8B, the side end surface of theconductive film 407 c is in contact with the top surface of theconductive film 407 b and the side end surface of the conductive film407 b is in contact with the top surface of the conductive film 407 a,whereby steps are generated at the side end surfaces of the sourceelectrode 408 a and the drain electrode 408 b.

As illustrated in FIG. 8C, void portions are generated in the oxideinsulating film 410 formed later due to the steps. Although, in thisembodiment, a stacked-layer structure of a conductive film in whichsteps of the side end surfaces of the source electrode 408 a and thedrain electrode 408 b are apparent is used for description, the presentinvention is not limited thereto, and also in a single-layer conductivefilm, a void portion is generated in the oxide insulating film 410formed later due to a corner portion of a side end surface. The voidportion in the oxide insulating film 410 is described later.

Next, the oxide insulating film 410 which is part of the insulating film412 is formed to cover the gate insulating film 404, the semiconductorfilm 406, the source electrode 408 a, and the drain electrode 408 b (seeFIG. 3A).

The oxide insulating film 410 is a stacked-layer film of the oxideinsulating film 410 a and the oxide insulating film 410 b and can beformed by a plasma CVD method or a sputtering method. The oxideinsulating film 410 is preferably a film which can supply oxygen to thesemiconductor film 406 because the oxide insulating film 410 is incontact with the semiconductor film 406. The oxide insulating film 410can be formed using a single layer of a silicon oxide film, a siliconoxynitride film, or the like or a stacked layer thereof. Alternatively,as the oxide insulating film 410, a gallium oxide film, an aluminumoxide film, an aluminum oxynitride film, or the like can be used.

As the oxide insulating film 410 a, a silicon oxide film or a siliconoxynitride film can be formed under the following conditions: thesubstrate placed in a treatment chamber of the plasma CVD apparatus,which is vacuum-evacuated, is held at a temperature higher than or equalto 300° C. and lower than or equal to 400° C., preferably higher than orequal to 320° C. and lower than or equal to 370° C.; the pressure isgreater than or equal to 100 Pa and less than or equal to 250 Pa withintroduction of the source gas into the treatment chamber; andhigh-frequency power is supplied to an electrode provided in thetreatment chamber.

Under the above film formation conditions, the bonding strength ofsilicon and oxygen becomes strong in the above substrate temperaturerange. Consequently, as the oxide insulating film 410 a, a dense andhard oxide insulating film through which oxygen is permeated, typically,a silicon oxide film or a silicon oxynitride film having an etching ratelower than or equal to 10 nm/min, preferably lower than or equal to 8nm/min when etching is performed at 25° C. with 0.5 weight % ofhydrofluoric acid can be formed.

Here, as the oxide insulating film 410 a, a 50-nm-thick siliconoxynitride film is formed by a plasma CVD method under the followingconditions: silane with a flow rate of 30 sccm and dinitrogen monoxidewith a flow rate of 4000 sccm are used as the source gas; the pressurein the treatment chamber is 200 Pa; the substrate temperature is 220°C.; and a high-frequency power of 150 W is supplied to parallel plateelectrodes with the use of a 27.12 MHz high-frequency power source.Under the above conditions, a silicon oxynitride film through whichoxygen is permeated can be formed.

As the oxide insulating film 410 b, a silicon oxide film or a siliconoxynitride film can be formed under the following conditions: thesubstrate placed in a treatment chamber of the plasma CVD apparatus,which is vacuum-evacuated, is held at a temperature higher than or equalto 180° C. and lower than or equal to 260° C., preferably higher than orequal to 200° C. and lower than or equal to 240° C.; the pressure isgreater than or equal to 100 Pa and less than or equal to 250 Pa,preferably greater than or equal to 100 Pa and less than or equal to 200Pa with introduction of the source gas into the treatment chamber; and ahigh-frequency power greater than or equal to 0.17 W/cm² and less thanor equal to 0.5 W/cm², preferably greater than or equal to 0.25 W/cm²and less than or equal to 0.35 W/cm² is supplied to an electrodeprovided in the treatment chamber.

A deposition gas containing silicon and an oxidizing gas are preferredto be used as the source gas of the oxide insulating film 410 b. Typicalexamples of the deposition gas containing silicon include silane,disilane, trisilane, and silane fluoride. As the oxidizing gas, oxygen,ozone, dinitrogen monoxide, nitrogen dioxide, and the like can be givenas examples.

As the film formation conditions of the oxide insulating film 410 b, thehigh-frequency power having the above power density is supplied to thetreatment chamber having the above pressure, whereby the degradationefficiency of the source gas in plasma is increased, oxygen radicals areincreased, and oxidation of the source gas is promoted; therefore, theoxygen content of the oxide insulating film 410 b becomes higher than inthe stoichiometric composition. However, in the case where the substratetemperature is within the above temperature range, the bond betweensilicon and oxygen is weak, and accordingly, part of oxygen is releasedby heating. Thus, it is possible to form an oxide insulating film whichcontains oxygen at a higher proportion than the stoichiometriccomposition and from which part of oxygen is released by heating.Further, the oxide insulating film 410 a is provided over thesemiconductor film 406. Thus, in the formation step of the oxideinsulating film 410 b, the oxide insulating film 410 a serves as aprotective film of the semiconductor film 406. Consequently, the oxideinsulating film 410 b can be formed using the high-frequency powerhaving a high power density while damage to the semiconductor film 406is reduced.

In this manner, it is preferable that the oxide insulating film 410 bein contact with the semiconductor film 406, the source electrode 408 a,and the drain electrode 408 b, be formed under a low power condition,and be a stacked-layer structure of the oxide insulating film 410 a withhigh coverage and the oxide insulating film 410 b over the oxideinsulating film 410 a.

In the case where the steps are generated at the side end surfaces ofthe source electrode 408 a and the drain electrode 408 b, the voidportions 413 as illustrated in FIG. 8C are generated when the oxideinsulating film 410 is formed. Such the void portion 413 can be seen byobserving a cross-sectional shape of the insulating film 412 by scanningtransmission electron microscopy (STEM). The void portion 413 has alower dielectric constant than a film in which the void portion 413 isformed; thus, capacitance generated between wirings due tominiaturization of a semiconductor device can be reduced, so that thesemiconductor device can operate at high speed while high degree ofintegration is kept.

The oxide insulating film 410 is a film with low density including avoid portion. The oxide insulating film 410 has a void portion (alow-density region), so that the oxide insulating film 410 as a wholehas a low film density.

The film density of the entire insulating film 412 measured by X-rayreflectometry (XRR) is preferably higher than or equal to 2.26 g/cm³ andlower than or equal to 2.50 g/cm³.

After the oxide insulating film 410 is formed, heat treatment may beperformed. The temperature of the heat treatment is typically higherthan or equal to 150° C. and lower than the strain point of thesubstrate, preferably higher than or equal to 200° C. and lower than orequal to 450° C., more preferably higher than or equal to 300° C. andlower than or equal to 450° C.

Next, the nitride insulating film 411 is formed to cover the oxideinsulating film 410 (see FIG. 3B).

The nitride insulating film 411 can be formed by a plasma CVD method ora sputtering method and using a single layer of silicon nitride, siliconnitride oxide, or the like or a stacked layer thereof. Alternatively, asthe nitride insulating film 411, an aluminum nitride, an aluminumnitride oxide, or the like can be used. Further, the nitride insulatingfilm 411 is a film with high coverage, whereby the steps of the side endsurface of the source electrode 408 a and the drain electrode 408 bbecome gentler (the step portions are planarized) and a void portion dueto the step is not easily generated, which is preferable. Alternatively,aluminum oxide can be used instead of the nitride insulating film 411.

The nitride insulating film 411 has a function of covering the voidportions generated in the oxide insulating film 410 due to the steps ofthe side end surfaces of the source electrode 408 a and the drainelectrode 408 b. When the void portion is covered with the nitrideinsulating film 411, the void portion can be prevented from expanding tothe outside of the oxide insulating film 410. Alternatively, the voidportion may be filled with the nitride insulating film 411. Further, thenitride insulating film 411 functions as a barrier film which suppressesentry of hydrogen or a compound containing hydrogen (e.g., water) fromthe outside or the interlayer insulating film 414 formed later to thesemiconductor film 406; thus, the reliability of the transistor can beimproved.

Through the above steps, the transistor 450 in this embodiment can bemanufactured.

Next, an interlayer insulating film 414 is formed over the transistor450.

For the interlayer insulating film 414, an organic material such as anacrylic resin, an epoxy resin, a benzocyclobutene-based resin,polyimide, and polyamide can be used. Other than such organic materials,it is possible to use a silicone resin or the like.

Note that the interlayer insulating film 414 may be formed by stacking aplurality of insulating films formed using these materials.

Next, an opening is provided in the insulating film 412 and theinterlayer insulating film 414, and an electrode 416 electricallyconnected to the drain electrode 408 b through the opening is formedover the interlayer insulating film 414 (see FIG. 3C).

For the electrode 416, a material used for the source electrode 408 a orthe drain electrode 408 b can be used as appropriate. The electrode 416can be formed using a light-transmitting conductive material such asindium oxide containing tungsten oxide, indium zinc oxide containingtungsten oxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, or indium tin oxide to which silicon oxide isadded.

Thus, the void portion in the oxide insulating film 410 has a lowerdielectric constant than a film in which the void portion is formed;thus, capacitance generated between wirings due to miniaturization of asemiconductor device can be reduced, so that the semiconductor devicecan operate at high speed while high degree of integration is kept. Whenthe void portion is covered with the nitride insulating film 411, thevoid portion can be prevented from expanding to the outside of the oxideinsulating film 410. Alternatively, the void portion may be filled withthe nitride insulating film 411.

Further, the nitride insulating film 411 functions as a barrier filmwhich suppresses entry of hydrogen or a compound containing hydrogen(e.g., water) from the outside or the interlayer insulating film 414formed later to the semiconductor film 406; thus, the reliability of thetransistor 450 can be improved.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 2

In this embodiment, a semiconductor device which is different fromEmbodiment 1 is described with reference to drawings. FIGS. 4A and 4Bshow a top view and a cross-sectional view of a transistor 550 that is asemiconductor device of one embodiment of the present invention. FIG. 4Ashows the top view of the transistor 550, and FIG. 4B shows thecross-sectional view taken along dashed-dotted line C-D in FIG. 4A. Atransistor 550 shown in this embodiment is a top-gate transistor, whichis different from the transistor 450 Embodiment 1.

The transistor 550 in FIGS. 4A and 4B includes a base insulating film401 provided over the substrate 400 having an insulating surface, thesemiconductor film 406 provided over the base insulating film 401, thesource electrode 408 a and the drain electrode 408 b which are providedover the base insulating film 401 and the semiconductor film 406, a gateinsulating film 512 which covers the source electrode 408 a and thedrain electrode 408 b and is in contact with the semiconductor film 406,and the gate electrode 402 which is provided over the gate insulatingfilm 512 and overlaps with the semiconductor film 406. In addition, theinterlayer insulating film 414 covering the transistor 550 is provided,and the electrode 416 which is electrically connected to the drainelectrode 408 b through an opening formed in the insulating film 412 andthe interlayer insulating film 414 is provided over the interlayerinsulating film 414. Note that in this embodiment, the electrode 416 iselectrically connected to the drain electrode 408 b; however, thepresent invention is not limited thereto, and the electrode 416 may beelectrically connected to the source electrode 408 a.

In this embodiment, the gate insulating film 512 is a stack of an oxideinsulating film 510 which is a first insulating film in contact with thesemiconductor film 406, the source electrode 408 a, and the drainelectrode 408 b and a nitride insulating film 511 over the oxideinsulating film 510, which is a second insulating film functioning as aprotective film. The oxide insulating film 510 is a stack of an oxideinsulating film 510 a which is in contact with the semiconductor film406, the source electrode 408 a, and the drain electrode 408 b, formedunder a low power condition, and has high coverage and an oxideinsulating film 510 b over the oxide insulating film 510 a.

Void portions 413 due to steps of the side end surfaces of the sourceelectrode 408 a and the drain electrode 408 b are generated in portionsof the oxide insulating film 510 which cover the steps. The void portion413 has a lower dielectric constant than a film in which the voidportion 413 is formed; thus, capacitance generated between wirings dueto miniaturization of a semiconductor device can be reduced, so that thesemiconductor device can operate at high speed while high degree ofintegration is kept. Although moisture might enter the semiconductorfilm 406 through the void portion 413 and characteristics of thetransistor 550 might be adversely affected, the nitride insulating film511 is provided over the oxide insulating film 510, whereby a voidportion generated in the oxide insulating film 510 can be covered.

When the void portion 413 is covered with the nitride insulating film511, the void portion 413 can be prevented from expanding to the outsideof the oxide insulating film 510. Alternatively, the void portion 413may be filled with the nitride insulating film 511. Further, the nitrideinsulating film 511 functions as a barrier film which suppresses entryof hydrogen or a compound containing hydrogen (e.g., water) from theoutside or the interlayer insulating film 414 formed later to thesemiconductor film 406.

Next, a method for manufacturing the transistor 550 is described withreference to FIGS. 5A to 5C and FIGS. 6A to 6D.

First, the base insulating film 401 is formed over the substrate 400having an insulating surface. The materials, the manufacturing methods,and the like of the substrate 400 and the gate insulating film 404 inEmbodiment 1 can be referred to for those of the substrate 400 and thebase insulating film 401 in this embodiment.

Next, the semiconductor film 406 is formed over the base insulating film401 (see FIG. 5A). The material, the manufacturing method, and the likeof the semiconductor film 406 in Embodiment 1 can be referred to forthose of the semiconductor film 406 in this embodiment.

Then, a conductive film is formed over the semiconductor film 406 andprocessed by etching treatment to form the source electrode 408 a andthe drain electrode 408 b (including a wiring formed with the samelayer) (see FIG. 5B). The materials, the manufacturing methods, and thelike of the source electrode 408 a and the drain electrode 408 b inEmbodiment 1 can be referred to for those of the source electrode 408 aand the drain electrode 408 b in this embodiment.

Further, as described in Embodiment 1, steps are generated at the sideend surfaces of the source electrode 408 a and the drain electrode 408 band void portions are generated in the gate insulating film 512 formedlater due to the steps. The void portion in the gate insulating film 512is described later.

Next, the oxide insulating film 510 which is part of the gate insulatingfilm 512 is formed to cover the base insulating film 401, thesemiconductor film 406, the source electrode 408 a, and the drainelectrode 408 b (see FIG. 5C).

In this manner, it is preferable that the oxide insulating film 510 bein contact with the base insulating film 401, the semiconductor film406, the source electrode 408 a, and the drain electrode 408 b, beformed under a low power condition, and be a stacked-layer structure ofthe oxide insulating film 510 a with high coverage and the oxideinsulating film 510 b over the oxide insulating film 510 a. Thematerial, the manufacturing method, and the like of the oxide insulatingfilm 410 in Embodiment 1 can be referred to for those of the oxideinsulating film 510.

In the case where the steps are generated at the side end surfaces ofthe source electrode 408 a and the drain electrode 408 b, the voidportions 413 as described in Embodiment 1 are generated when the oxideinsulating film 510 is formed. The void portion 413 has a lowerdielectric constant than a film in which the void portion 413 is formed;thus, capacitance generated between wirings due to miniaturization of asemiconductor device can be reduced, so that the semiconductor devicecan operate at high speed while high degree of integration is kept.

The oxide insulating film 510 b is a film with low density including avoid portion 413. The oxide insulating film 510 b has a low-densityregion, so that the oxide insulating film 510 b as a whole has a lowfilm density.

The film density of the entire gate insulating film 512 measured byX-ray reflectometry (XRR) is preferably higher than or equal to 2.26g/cm³ and lower than or equal to 2.50 g/cm³.

Next, the nitride insulating film 511 is formed to cover the oxideinsulating film 510 (see FIG. 6A). The material, the manufacturingmethod, and the like of the nitride insulating film 411 in Embodiment 1can be referred to for those of the nitride insulating film 511 in thisembodiment.

The nitride insulating film 511 has a function of covering the voidportions generated in the oxide insulating film 510 due to the steps ofthe side end surfaces of the source electrode 408 a and the drainelectrode 408 b. When the void portion is covered with the nitrideinsulating film 511, the void portion can be prevented from expanding tothe outside of the oxide insulating film 510. Alternatively, the voidportion may be filled with the nitride insulating film 511. Further, thenitride insulating film 511 functions as a barrier film which suppressesentry of hydrogen or a compound containing hydrogen (e.g., water) fromthe outside or the interlayer insulating film 414 formed later to thesemiconductor film 406; thus, the reliability of the transistor can beimproved.

Next, the gate electrode 402 is formed over the gate insulating film 512overlapping with the semiconductor film 406 (see FIG. 6B). The material,the manufacturing method, and the like of the gate electrode 402 inEmbodiment 1 can be referred to for those of the gate electrode 402 inthis embodiment.

Through the above steps, the transistor 550 of this embodiment can bemanufactured.

Next, the interlayer insulating film 414 is formed over the transistor550, an opening is provided in the insulating film 412 and theinterlayer insulating film 414, and the electrode 416 electricallyconnected to the drain electrode 408 b through the opening is formedover the interlayer insulating film 414 (see FIG. 6C). The materials,the manufacturing methods, and the like of the interlayer insulatingfilm 414 and the electrode 416 in Embodiment 1 can be referred to forthose of the interlayer insulating film 414 and the electrode 416 inthis embodiment.

Further, as illustrated in FIG. 6D, an insulating film 530 formed of anoxide insulating film and a nitride insulating film may be provided overthe gate electrode 402. By forming a nitride insulating film covering anoxide insulating film, a void portion is generated in the insulatingfilm 530 due to a corner portion of a side end surface of the gateelectrode 402. However, with the above-described structure, when thevoid portion is covered with the nitride insulating film, the voidportion can be prevented from expanding to the outside of the oxideinsulating film. Alternatively, a structure in which not the gateinsulating film 512 but the insulating film 530 is a stack of an oxideinsulating film and a nitride insulating film covering the oxideinsulating film may be employed.

Thus, the void portion in the oxide insulating film 510 has a lowerdielectric constant than a film in which the void portion is formed;thus, capacitance generated between wirings due to miniaturization of asemiconductor device can be reduced, so that the semiconductor devicecan operate at high speed while high degree of integration is kept. Whenthe void portion is covered with the nitride insulating film 511, thevoid portion can be prevented from expanding to the outside of the oxideinsulating film 510. Alternatively, the void portion may be filled withthe nitride insulating film 511. Further, the nitride insulating film511 functions as a barrier film which suppresses entry of hydrogen or acompound containing hydrogen (e.g., water) from the outside or theinterlayer insulating film 414 formed later to the semiconductor film406; thus, the reliability of the transistor 550 can be improved.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 3

In this embodiment, a semiconductor device having a structure differentfrom those of the semiconductor devices in Embodiments 1 and 2 isdescribed with reference to FIGS. 7A to 7C.

A transistor 560 illustrated in FIG. 7A includes a plurality of gateelectrodes facing each other with a semiconductor film 406 providedtherebetween. The transistor 560 includes a gate electrode 552 providedover the substrate 400 having an insulating surface, a base insulatingfilm 401 provided over the gate electrode 552, the semiconductor film406 provided over the base insulating film 401, the source electrode 408a and the drain electrode 408 b which are provided over the baseinsulating film 401 and the semiconductor film 406, a gate insulatingfilm 512 which covers the source electrode 408 a and the drain electrode408 b and is in contact with the semiconductor film 406, and the gateelectrode 402 which is provided over the gate insulating film 512 andoverlaps with the semiconductor film 406. In addition, the interlayerinsulating film 414 covering the transistor 560 is provided, and theelectrode 416 which is electrically connected to the drain electrode 408b through an opening formed in the insulating film 412 and theinterlayer insulating film 414 is provided over the interlayerinsulating film 414.

The material, the manufacturing method, and the like of the gateelectrode 402 in Embodiment 1 can be referred to for those of the gateelectrode 552.

The transistor 560 in this embodiment has the gate electrode 552 and thegate electrode 402 facing each other with the semiconductor film 406provided therebetween. By application of different potentials to thegate electrode 552 and the gate electrode 402, the threshold voltage ofthe transistor 560 can be controlled. Alternatively, when the samepotential is applied to the gate electrode 552 and the gate electrode402, the on-state current of the transistor 560 can be increased.

Further, the oxide insulating film 410 does not necessarily have atwo-layer structure. For example, a transistor 570 illustrated in FIG.7B has a structure in which an oxide insulating film 410 c is furtherprovided over the oxide insulating film 410 b in the oxide insulatingfilm 410 of the transistor 450 in Embodiment 1. Further, a transistor580 illustrated in FIG. 7C has a structure in which a stacked layer ofan oxide insulating film 410 d and an oxide insulating film 410 e isfurther provided over the oxide insulating film 410 c. Note that each ofthe materials used for the oxide insulating film 410 c and the oxideinsulating film 410 e can be similar to that used for the oxideinsulating film 410 a, and the material used for the oxide insulatingfilm 410 d can be similar to that used for the oxide insulating film 410b.

Further, the oxide insulating film 410 a formed with lower power thanthe oxide insulating film 410 b is a film with low density, andadequately covers the steps of the side end surfaces of the sourceelectrode 408 a and the drain electrode 408 b; thus, these oxideinsulating films are stacked as described above, whereby the steps canbe gentle.

In addition, when the oxide insulating film 410 b which is a denser filmthan the oxide insulating film 410 a is formed over the oxide insulatingfilm 410 a, by an effect of the oxide insulating film 410 a(planarization of a step portion owing to high step coverage), a voidportion due to the step is not easily generated in the oxide insulatingfilm 410 b.

Further, in the semiconductor film 406, the thickness of a region incontact with the oxide insulating film 410 a is smaller than thethickness of a region in contact with the source electrode 408 a and thedrain electrode 408 b. In the semiconductor film 406, the region with asmaller thickness is formed by being partly etched at the time ofprocessing a conductive film to form the source electrode 408 a and thedrain electrode 408 b or by performing etching treatment on an exposedregion of the semiconductor film 406 after forming the source electrode408 a and the drain electrode 408 b. The region serves as a channelformation region of the transistor 570 and the transistor 580.

By reducing the thickness of the channel formation region in thesemiconductor film 406, the resistance of the regions in contact withthe source electrode 408 a and the drain electrode 408 b can be lowerthan that of the channel formation region. Thus, contact resistancebetween the semiconductor film 406 and the source electrode 408 a andcontact resistance between the semiconductor film 406 and the drainelectrode 408 b can be reduced.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 4

In this embodiment, the case where an oxide semiconductor film is usedas the semiconductor film 406 of the above embodiments is described.

In the transistor including an oxide semiconductor film, the current inan off state (off-state current) can be controlled to be small andrelatively high field-effect mobility can be obtained; thus, thetransistor can operate at high speed. Further, in the above embodiments,the oxide insulating film under the nitride insulating film is a filmwhich can supply oxygen, whereby oxygen is released by heating from thevoid portion which is closed by the nitride insulating film. Bysupplying oxygen to the oxide semiconductor film, the above-describedeffect becomes more significant. A deposition method of the oxidesemiconductor film is described below.

The oxide semiconductor film can be formed by a sputtering method, amolecular beam epitaxy (MBE) method, a chemical vapor deposition (CVD)method, a pulsed laser deposition (PLD) method, an atomic layerdeposition (ALD) method, or the like as appropriate.

Further, when the oxide semiconductor film contains a large amount ofhydrogen, the hydrogen and an oxide semiconductor are bonded to eachother, so that part of the hydrogen serves as a donor and causesgeneration of an electron which is a carrier. As a result, the thresholdvoltage of the transistor shifts in the negative direction. Accordingly,the hydrogen concentration in the oxide semiconductor film is preferablylower than 5×10¹⁸ atoms/cm³, more preferably lower than or equal to1×10¹⁸ atoms/cm³, still more preferably lower than or equal to 5×10¹⁷atoms/cm³, further more preferably lower than or equal to 1×10¹⁶atoms/cm³. Note that the above hydrogen concentration in the oxidesemiconductor film is measured by secondary ion mass spectrometry(SIMS).

For the above-described reason, it is preferable that the gas used fordeposition of the oxide semiconductor film do not contain an impuritysuch as water, hydrogen, a hydroxyl group, or hydride. In other words,it is preferable to use a gas having a purity higher than or equal to6N, preferably higher than or equal to 7N (i.e., the impurityconcentration in the gas is lower than or equal to 1 ppm, preferablylower than or equal to 0.1 ppm).

Further, in the deposition of the oxide semiconductor film, in order toremove moisture (including water, water vapor, hydrogen, a hydroxylgroup, or hydride) in the deposition chamber, an entrapment vacuum pumpsuch as a cryopump, an ion pump, or a titanium sublimation pump ispreferably used. The evacuation unit may be a turbo molecular pumpprovided with a cold trap. From the deposition chamber which isevacuated with a cryopump, a hydrogen atom, a compound containing ahydrogen atom such as water (H₂O) (more preferably, also a compoundcontaining a carbon atom), and the like are removed, whereby theconcentration of an impurity such as hydrogen or moisture in the oxidesemiconductor film formed in the deposition chamber can be reduced.

Note that a target used in the sputtering apparatus preferably has arelative density greater than or equal to 90% and less than or equal to100%, preferably greater than or equal to 95% and less than or equal to100%. The use of the target with high relative density enables theformed oxide semiconductor film to be a dense film.

As a material of the oxide semiconductor film, for example, anIn-M-Zn—O-based material may be used. Here, a metal element M is anelement whose bond energy with oxygen is higher than that of In and thatof Zn. Alternatively, the metal element M is an element which has afunction of suppressing desorption of oxygen from the In-M-Zn—O-basedmaterial. Owing to the effect of the metal element M, generation ofoxygen vacancies in the oxide semiconductor film is suppressed.Therefore, change in electrical characteristics of the transistor, whichis caused by oxygen vacancies, can be reduced; accordingly, a highlyreliable transistor can be obtained.

Specifically, the metal element M may be Al, Sc, Ti, V, Cr, Mn, Fe, Co,Ni, Ga, Y, Zr, Nb, Mo, Sn, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er,Tm, Yb, Lu, Hf, Ta, or W, and is preferably Al, Ti, Ga, Y, Zr, Ce, orHf. For the metal element M, one or more elements may be selected fromthe above elements. Further, Ge can be used instead of the metal elementM.

Here, in the In-M-Zn—O-based material, which is an oxide semiconductor,the higher the concentration of In is, the higher the carrier mobilityand the carrier density are. As a result, the oxide semiconductor hashigher conductivity as the concentration of In is higher.

A structure of an oxide semiconductor film is described below.

An oxide semiconductor film is classified roughly into a single-crystaloxide semiconductor film and a non-single-crystal oxide semiconductorfilm. The non-single-crystal oxide semiconductor film includes any of anamorphous oxide semiconductor film, a microcrystalline oxidesemiconductor film, a polycrystalline oxide semiconductor film, a c-axisaligned crystalline oxide semiconductor (CAAC-OS) film, and the like.

The amorphous oxide semiconductor film has disordered atomic arrangementand no crystalline component. A typical example thereof is an oxidesemiconductor film in which no crystal part exists even in a microscopicregion, and the whole of the film is amorphous.

The microcrystalline oxide semiconductor film includes a microcrystal(also referred to as nanocrystal) with a size greater than or equal to 1nm and less than 10 nm, for example. Thus, the microcrystalline oxidesemiconductor film has a higher degree of atomic order than theamorphous oxide semiconductor film. Hence, the density of defect statesof the microcrystalline oxide semiconductor film is lower than that ofthe amorphous oxide semiconductor film.

The CAAC-OS film is one of oxide semiconductor films including aplurality of crystal parts, and most of the crystal parts each fitinside a cube whose one side is less than 100 nm. Thus, there is a casewhere a crystal part included in the CAAC-OS film fits a cube whose oneside is less than 10 nm, less than 5 nm, or less than 3 nm. The densityof defect states of the CAAC-OS film is lower than that of themicrocrystalline oxide semiconductor film. The CAAC-OS film is describedin detail below.

In a transmission electron microscope (TEM) image of the CAAC-OS film, aboundary between crystal parts, that is, a grain boundary is not clearlyobserved. Thus, in the CAAC-OS film, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

According to the TEM image of the CAAC-OS film observed in a directionsubstantially parallel to a sample surface (cross-sectional TEM image),metal atoms are arranged in a layered manner in the crystal parts. Eachmetal atom layer has a morphology reflected by a surface over which theCAAC-OS film is formed (hereinafter, a surface over which the CAAC-OSfilm is formed is referred to as a formation surface) or a top surfaceof the CAAC-OS film, and is arranged in parallel to the formationsurface or the top surface of the CAAC-OS film.

On the other hand, according to the TEM image of the CAAC-OS filmobserved in a direction substantially perpendicular to the samplesurface (plan TEM image), metal atoms are arranged in a triangular orhexagonal configuration in the crystal parts. However, there is noregularity of arrangement of metal atoms between different crystalparts.

From the results of the cross-sectional TEM image and the plan TEMimage, alignment is found in the crystal parts in the CAAC-OS film.

A CAAC-OS film is subjected to structural analysis with an X-raydiffraction (XRD) apparatus. For example, when the CAAC-OS filmincluding an InGaZnO₄ crystal is analyzed by an out-of-plane method, apeak appears frequently when the diffraction angle (2θ) is around 31°.This peak is derived from the (009) plane of the InGaZnO₄ crystal, whichindicates that crystals in the CAAC-OS film have c-axis alignment, andthat the c-axes are aligned in a direction substantially perpendicularto the formation surface or the top surface of the CAAC-OS film.

On the other hand, when the CAAC-OS film is analyzed by an in-planemethod in which an X-ray enters a sample in a direction perpendicular tothe c-axis, a peak appears frequently when 2θ is around 56°. This peakis derived from the (110) plane of the InGaZnO₄ crystal. Here, analysis(ϕ scan) is performed under conditions where the sample is rotatedaround a normal vector of a sample surface as an axis (ϕ axis) with 2θfixed at around 56°. In the case where the sample is a single-crystaloxide semiconductor film of InGaZnO₄, six peaks appear. The six peaksare derived from crystal planes equivalent to the (110) plane. On theother hand, in the case of a CAAC-OS film, a peak is not clearlyobserved even when ϕ scan is performed with 2θ fixed at around 56°.

According to the above results, in the CAAC-OS film having c-axisalignment, while the directions of a-axes and b-axes are differentbetween crystal parts, the c-axes are aligned in a direction parallel toa normal vector of a formation surface or a normal vector of a topsurface. Thus, each metal atom layer arranged in a layered mannerobserved in the cross-sectional TEM image corresponds to a planeparallel to the a-b plane of the crystal.

Note that the crystal part is formed concurrently with deposition of theCAAC-OS film or is formed through crystallization treatment such as heattreatment. As described above, the c-axis of the crystal is aligned in adirection parallel to a normal vector of a formation surface or a normalvector of a top surface. Thus, for example, in the case where a shape ofthe CAAC-OS film is changed by etching or the like, the c-axis might notbe necessarily parallel to a normal vector of a formation surface or anormal vector of a top surface of the CAAC-OS film.

Further, the degree of crystallinity in the CAAC-OS film is notnecessarily uniform. For example, in the case where crystal growthleading to the CAAC-OS film occurs from the vicinity of the top surfaceof the film, the degree of the crystallinity in the vicinity of the topsurface is higher than in the vicinity of the formation surface in somecases. Further, when an impurity is added to the CAAC-OS film, thecrystallinity in a region to which the impurity is added is changed, andthe degree of crystallinity in the CAAC-OS film varies depending onregions.

Note that when the CAAC-OS film with an InGaZnO₄ crystal is analyzed byan out-of-plane method, a peak of 2θ may also be observed at around 36°,in addition to the peak of 2θ at around 31°. The peak of 2θ at around36° indicates that a crystal having no c-axis alignment is included inpart of the CAAC-OS film. It is preferable that in the CAAC-OS film, apeak of 2θ appear at around 31° and a peak of 2θ do not appear at around36°.

In a transistor using the CAAC-OS film, change in electriccharacteristics due to irradiation with visible light or ultravioletlight is small. Thus, the transistor has high reliability.

Note that an oxide semiconductor film may be a stacked film includingtwo or more films of an amorphous oxide semiconductor film, amicrocrystalline oxide semiconductor film, and a CAAC-OS film, forexample.

For example, the CAAC-OS film is formed by sputtering with apolycrystalline oxide semiconductor sputtering target. By collision ofions with the sputtering target, a crystal region included in thesputtering target may be separated from the target along an a-b plane;in other words, sputtered particles having a plane parallel to the a-bplane (flat-plate-like sputtered particles or pellet-like sputteredparticles) may flake off from the target. In this case, theflat-plate-like sputtered particles reach a substrate while maintainingtheir crystal state, whereby the CAAC-OS film can be formed.

For the deposition of the CAAC-OS film, the following conditions arepreferably used.

The crystal state can be prevented from being broken by the impuritiesby reducing the amount of impurities entering the CAAC-OS film duringthe deposition, for example, by reducing the concentration of impurities(e.g., hydrogen, water, carbon dioxide, and nitrogen) that exist in thedeposition chamber or by reducing the concentration of impurities in adeposition gas. Specifically, a deposition gas with a dew point of −80°C. or lower, preferably −100° C. or lower, more preferably −120° C. orlower, is used.

By increasing the substrate heating temperature during the deposition,migration of sputtered particles is likely to occur after the sputteredparticles reach a substrate surface. Specifically, the substrate heatingtemperature during the deposition ranges from 100° C. to 740° C.,preferably from 200° C. to 500° C. By increasing the substrate heatingtemperature during the deposition, when the flat-plate-like sputteredparticle reaches the substrate, migration occurs on the substratesurface, so that a flat plane of the flat-plate-like sputtered particleis attached to the substrate.

It is preferable that the proportion of oxygen in the deposition gas beincreased and the power be optimized in order to reduce plasma damage atthe deposition. The proportion of oxygen in the deposition gas is 30 vol% or higher, preferably 100 vol %.

As an example of the sputtering target, an In—Ga—Zn-based oxide targetis described below.

A polycrystalline In—Ga—Zn-based oxide target is made by mixing InO_(X)powder, GaO_(Y) powder, and ZnO_(Z) powder at a predetermined molarratio, applying pressure to the mixture, and then performing heattreatment on the mixture at temperatures ranging from 1000° C. to 1500°C. Note that X, Y, and Z are each a given positive number.

Here, the predetermined molar ratio of InO_(X) powder to GaO_(Y) powderand ZnO_(Z) powder is, for example, 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3,or 3:1:2. The kinds of powder and the molar ratio for mixing powder maybe determined as appropriate depending on the desired target.

The oxide semiconductor film immediately after being formed ispreferably in a supersaturated state in which the proportion of oxygenis higher than in the stoichiometric composition. For example, when theoxide semiconductor film is formed by a sputtering method, it ispreferable that the film be formed in a film formation gas containing ahigh percentage of oxygen, and it is especially preferable that the filmbe formed under an oxygen atmosphere (oxygen gas: 100%). When the filmis formed in a film formation gas containing a high percentage ofoxygen, particularly under a 100% oxygen gas atmosphere, release of Znfrom the film can be suppressed even when the film formation temperatureis higher than or equal to 300° C., for example.

Note that the oxide semiconductor film may have a structure in which aplurality of oxide semiconductor films is stacked. For example, theoxide semiconductor film may be a stack of a first oxide semiconductorfilm and a second oxide semiconductor film that are formed using metaloxides with different compositions. For example, the first oxidesemiconductor film may be formed using a three-component metal oxide,and the second oxide semiconductor film may be formed using atwo-component metal oxide. Alternatively, for example, both the firstoxide semiconductor film and the second oxide semiconductor film may beformed using a three-component metal oxide.

Further, it is possible that the constituent elements of the first oxidesemiconductor film and the second oxide semiconductor film are the sameand the compositions of the constituent elements of the first oxidesemiconductor film and the second oxide semiconductor film aredifferent. For example, the first oxide semiconductor film may have anatomic ratio of In:Ga:Zn=1:1:1, and the second oxide semiconductor filmmay have an atomic ratio of In:Ga:Zn=3:1:2. Alternatively, the firstoxide semiconductor film may have an atomic ratio of In:Ga:Zn=1:3:2, andthe second oxide semiconductor film may have an atomic ratio ofIn:Ga:Zn=2:1:3.

At this time, one of the first oxide semiconductor film and the secondoxide semiconductor film, which is closer to the gate electrode,preferably contains In and Ga at a proportion of In>Ga. The other oxidesemiconductor film, which is farther from the gate electrode preferablycontains In and Ga at a proportion of In Ga.

In an oxide semiconductor, the s orbital of heavy metal mainlycontributes to carrier transfer, and when the In content in the oxidesemiconductor is increased, overlap of the s orbitals is likely to beincreased. Therefore, an oxide having a composition where In>Ga hashigher mobility than an oxide having a composition where In Ga. Further,in Ga, the formation energy of an oxygen vacancy is larger and thus anoxygen vacancy is less likely to be generated than in In; therefore, theoxide having a composition where In Ga has more stable characteristicsthan the oxide having a composition where In>Ga.

An oxide semiconductor containing In and Ga at a proportion of In>Ga isused on the channel side, and an oxide semiconductor containing In andGa at a proportion of In Ga is used on the back channel side (a sideopposite to the channel), so that mobility and reliability of atransistor can be further improved.

Further, oxide semiconductors having different crystallinities may beused for the first oxide semiconductor film and the second oxidesemiconductor film. That is, two of a single crystal oxide semiconductorfilm, a polycrystalline oxide semiconductor film, an amorphous oxidesemiconductor film, microcrystalline oxide semiconductor film, and aCAAC-OS film may be combined as appropriate. When an amorphous oxidesemiconductor is used for at least one of the first oxide semiconductorfilm and the second oxide semiconductor film, internal stress orexternal stress of the oxide semiconductor film is relieved, variationin characteristics of a transistor is reduced, and reliability of thetransistor can be further improved.

On the other hand, an amorphous oxide semiconductor is likely to absorban impurity which serves as a donor, such as hydrogen, and an oxygenvacancy is likely to be generated; thus, an amorphous oxidesemiconductor easily becomes n-type. For this reason, it is preferableto use an oxide semiconductor having crystallinity such as a CAAC-OSfilm for the oxide semiconductor film on the channel side.

Further, the oxide semiconductor film may have a stacked-layer structureof three or more layers in which an amorphous semiconductor film isinterposed between a plurality of crystalline semiconductor films.Furthermore, a structure in which a crystalline semiconductor film andan amorphous semiconductor film are alternately stacked may be employed.

These two structures for making the oxide semiconductor film have astacked-layer structure of a plurality of layers can be combined asappropriate.

In the case where the oxide semiconductor film has a stacked-layerstructure of a plurality of layers, oxygen may be added each time theoxide semiconductor film is formed. For addition of oxygen, heattreatment in an oxygen atmosphere, an ion implantation method, an iondoping method, a plasma immersion ion implantation method, plasmatreatment performed in an atmosphere containing oxygen, or the like canbe employed.

Oxygen is added each time the oxide semiconductor film is formed,whereby an effect of reducing oxygen vacancies in the oxidesemiconductor can be improved.

In an insulating film in contact with the oxide semiconductor film, thefilm density of the entire film measured by X-ray reflectometry (XRR) ispreferably higher than or equal to 2.26 g/cm³ and lower than or equal to2.50 g/cm³, and an insulating film having a film density in the aboverange can release a large amount of oxygen.

When the insulating film is formed, after active species in the sourcegas are adsorbed on surfaces on which the insulating film is formed(here, the top surfaces of the source electrode and the drainelectrode), the active species move on the surfaces. However, when theinsulating film is a film which can supply oxygen, a dangling bond ofthe active species in the source gas is terminated with excess oxygen inthe insulating film and thus the insulating film is stabilized and theamount of active species in the source gas which move on the surfacesbecomes small. Accordingly, a portion where the insulating film is noteasily deposited due to a step portion or the like is formed; thus avoid portion is easily generated. Moreover, active species in the sourcegas of a film deposited later do not easily enter the void portion, andthe void portion is expanded.

Further, by forming the nitride insulating film, the void portion can bea closed space and a large amount of oxygen can be taken in the closedvoid portion; thus, the amount of oxygen released from the oxideinsulating film at the time of heating can be increased. As a result,oxygen vacancies in the oxide semiconductor film can be filled withoxygen from the oxide insulating film; thus, the reliability of thetransistor can be improved.

Further, in the case where oxide insulating films are stacked asillustrated in FIG. 7B and FIG. 7C in Embodiment 3, the oxide insulatingfilm 410 b is a film which supplies oxygen to the oxide semiconductorfilm; thus, when the nitride insulating film 411 is formed in contactwith the oxide insulating film 410 b with a high application power,excess oxygen contained in the oxide insulating film 410 b is releasedand oxygen supply capability might be impaired.

Thus, by providing the oxide insulating film 410 c or the oxideinsulating film 410 e directly under the nitride insulating film 411,impairment of the oxygen supply capability of the oxide insulating film410 b or the oxide insulating film 410 d due to the formation of thenitride insulating film 411 can be suppressed.

Next, models showing movement of nitrogen, hydrogen, water which isgenerated by heat treatment in an oxide semiconductor film 31 and anoxide insulating film 32 which can supply oxygen are described withreference to FIGS. 25A to 25D, FIGS. 26A to 26E, and FIGS. 27A to 27C.Note that in FIGS. 25A to 25D, FIGS. 26A to 26E, and FIGS. 27A to 27C, abroken line arrow indicates movement of each atom which is generated byheating, and a solid line indicates a change during heat treatment orbefore and after the heat treatment. Further, as the oxide insulatingfilm 32, an oxide insulating film containing more oxygen than in thestoichiometric composition is used.

FIGS. 25A to 25D each show a model showing movement of atoms which canbe mainly generated in the oxide insulating film 32 by heat treatment.

FIG. 25A shows movement of nitrogen atoms which is generated by heattreatment. In the model, nitrogen atoms N (here, two nitrogen atoms)contained in the oxide insulating film 32 are bonded to each other inthe oxide insulating film 32 or at the surface thereof by heat treatmentto form a nitrogen molecule, and the nitrogen molecule is released fromthe oxide insulating film 32.

FIG. 25B is a model showing movement of oxygen atoms which is generatedby heat treatment. An oxygen atom which is an excess of oxygen atomsover that in the stoichiometric composition (here, two oxygen atomsindicated by exO) contained in the oxide insulating film 32 are bondedto each other in the oxide insulating film 32 or at the surface thereofby heat treatment to form an oxygen molecule, and the oxygen molecule isreleased from the oxide insulating film 32.

FIG. 25C is a model showing movement of hydrogen atoms and an oxygenatom which is generated by heat treatment. Hydrogen atoms H (here, twohydrogen atoms) and an oxygen atom exO which is an excess of oxygenatoms over that in the stoichiometric composition contained in the oxideinsulating film 32 are bonded to each other in the oxide insulating film32 or at the surface thereof by heat treatment to form a water molecule,and the water molecule is released from the oxide insulating film 32.

FIG. 25D is a model showing movement of a water molecule which isgenerated by heat treatment. The water molecule contained in the oxideinsulating film 32 is released from the oxide insulating film 32 by heattreatment.

As shown in the above models, one or more nitrogen, hydrogen, and waterare released from the oxide insulating film 32 by heat treatment,whereby nitrogen content, hydrogen content, and water content in thefilm can be reduced.

Next, a model showing movement of atoms which can be generated by heattreatment in the oxide semiconductor film 31 is described with referenceto FIGS. 26A to 26E.

FIG. 26A is a model showing movement of nitrogen atoms which isgenerated by heat treatment. Nitrogen atoms N (here, two nitrogen atoms)contained in the oxide semiconductor film 31 are bonded to each other inthe oxide semiconductor film 31, at the interface between the oxidesemiconductor film 31 and the oxide insulating film 32, in the oxideinsulating film 32, or at the surface of the oxide insulating film 32 byheat treatment to form a nitrogen molecule, and the nitrogen molecule isreleased from the oxide semiconductor film 31.

FIG. 26B is a model showing movement of hydrogen atoms and an oxygenatom which is generated by heat treatment. After hydrogen atoms H (here,two hydrogen atoms) contained in the oxide semiconductor film 31 aremoved to the oxide insulating film 32 by heat treatment, these hydrogenatoms are bonded to an oxygen atom exO which is an excess of oxygenatoms over that in the stoichiometric composition in the oxideinsulating film 32 or at the surface thereof to form a water molecule,and the water molecule is released from the oxide insulating film 32.

FIG. 26C is a model showing another movement of hydrogen atoms and anoxygen atom which is generated by heat treatment. Hydrogen atoms Hcontained in the oxide semiconductor film 31 are bonded to the oxygenatom exO which is an excess of oxygen atoms over that in thestoichiometric composition in the oxide semiconductor film 31 or at theinterface between the oxide semiconductor film 31 and the oxideinsulating film 32 by heat treatment to form a water molecule, and thewater molecule is released from the oxide insulating film 32.

FIGS. 26D and 26E are models each showing another movement of hydrogenatoms and oxygen atoms which is generated by heat treatment. Hydrogenatoms H and an oxygen atom O which are contained in the oxidesemiconductor film 31 are bonded to each other in the oxidesemiconductor film 31, at the interface between the oxide semiconductorfilm 31 and the oxide insulating film 32, in the oxide insulating film32, or at the surface of the oxide insulating film 32 to form a watermolecule, and the water molecule is released from the oxide insulatingfilm 32. At this time, in the oxide semiconductor film 31, a positionfrom which the oxygen atom is released becomes an oxygen vacancy Vo asillustrated in FIG. 26E; however, the oxygen atom exO which is an excessof oxygen atoms over that in the stoichiometric composition is moved tothe position of the oxygen vacancy Vo, and the oxygen vacancy Vo isfilled with the oxygen atom exO to form an oxygen atom O.

In this manner, one or more nitrogen, hydrogen, and water are releasedfrom the oxide semiconductor film 31 by heat treatment, whereby nitrogencontent, hydrogen content, and water content in the film can be reduced.

Next, models each showing a change in oxygen vacancies in the oxidesemiconductor film 31 by heat treatment is described with reference toFIGS. 27A to 27C.

When an excess of oxygen atoms over that in the stoichiometriccomposition is moved to the oxide semiconductor film 31, a first oxygenatom is pushed out by the excess of oxygen atoms over that in thestoichiometric composition from the position of the first oxygen atom.The first oxygen atom which has been pushed out is moved to a positionof a second oxygen atom and the second oxygen atom is pushed out. Inthis manner, when an excess of oxygen atoms over that in thestoichiometric composition is moved to the oxide semiconductor film 31,oxygen atoms are sequentially pushed out among the plurality of oxygenatoms. In FIGS. 27A to 27C, oxygen atoms are sequentially pushed outamong the plurality of oxygen atoms is not shown, and models eachshowing a change in oxygen vacancies are described using three oxygenvacancies (Vo_1, Vo_2, and Vo_3) contained in the oxide semiconductorfilm 31 and oxygen contained in the oxide insulating film 32 which cansupply oxygen, specifically, an excess of oxygen atoms over that in thestoichiometric composition (exO_1, exO_2, and exO_3). Note that theoxide insulating film 32 is a stack of an oxide insulating film 32 awith high coverage and an oxide insulating film 32 b which can supplyoxygen, which is formed under a low power condition.

In FIGS. 27A to 27C, three oxygen vacancies (Vo_1, Vo_2, and Vo_3)contained in the oxide semiconductor film 31 and oxygen contained in theoxide insulating film 32 b which can supply oxygen, specifically, anexcess of oxygen atoms over that in the stoichiometric composition(exO_1, exO_2, and exO_3) are shown.

FIG. 27A shows reaction between an oxygen vacancy Vo_1 and an oxygenatom exO_1 by heat treatment. An excess of oxygen atoms over that in thestoichiometric composition exO_1 is moved to the position of the oxygenvacancy Vo_1 contained in the oxide semiconductor film 31 by heattreatment, the oxygen vacancy Vo_1 is filled, so that an oxygen atom O_1is formed.

Next, as illustrated in FIG. 27B, when an excess of oxygen atoms overthat in the stoichiometric composition exO_2 gets closer to the positionof the oxygen atom O_1 contained in the oxide semiconductor film 31, anoxygen atom O is released from the position of the oxygen atom O_1. Thereleased oxygen atom O is moved to the position of an oxygen vacancyVo_2, the oxygen vacancy Vo_2 is filled, so that an oxygen atom O_2 isformed. On the other hand, the position of the oxygen atom O_1 fromwhich an oxygen atom is released becomes an oxygen vacancy; however, anoxygen atom exO_2 is moved to the position of the oxygen vacancy, sothat the oxygen atom O_1 a is formed.

Next, as illustrated in FIG. 27C, when an excess of oxygen atoms overthat in the stoichiometric composition exO_3 gets closer to the positionof the oxygen atom O_1 a contained in the oxide semiconductor film 31,an oxygen atom O is released from the position of the oxygen atom O_1 a.The released oxygen atom O is moved to the position of the oxygen atomO_2. An oxygen atom O is released from the oxygen atom O_2. An oxygenvacancy Vo_3 is filled with the released oxygen atom O, so that anoxygen atom O_3 is formed. On the other hand, the position of the oxygenatom O_1 a from which an oxygen atom is released becomes an oxygenvacancy; however, an oxygen atom exO_3 is moved to the position of theoxygen vacancy, so that the oxygen atom O_1 b is formed. Further, theposition of the oxygen atom O_2 from which an oxygen atom is releasedalso becomes an oxygen vacancy; however, the oxygen atom released fromthe oxygen atom O_1 a is moved to the oxygen vacancy, so that the oxygenatom O_2 a is formed.

Through the above steps, an oxygen vacancy contained in the oxidesemiconductor film 31 can be filled with oxygen contained in the oxideinsulating film 32 b which can supply oxygen. Further, not only anoxygen vacancy on the surface of the oxide semiconductor film 31, butalso an oxygen vacancy in the film can be filled by heat treatment. Asdescribed above, the oxide insulating film 32 b which can supply oxygenwhile being heated is formed or heat treatment is performed after theoxide insulating film 32 b which can supply oxygen is provided, wherebythe number of oxygen vacancies contained in the oxide semiconductor film31 can be reduced.

When the oxide insulating film 32 b which contains more oxygen than inthe stoichiometric composition is provided over a back channel of theoxide semiconductor film 31 with an oxide insulating film provided asthe oxide insulating film 32 a through which oxygen is permeated, oxygencan be moved to the back channel side of the oxide semiconductor film31, and oxygen vacancies on the back channel side can be reduced.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

Embodiment 5

A semiconductor device (also referred to as a display device) having adisplay function can be manufactured using the transistor examples ofwhich are shown in the above embodiments. Moreover, some or all of thedriver circuits which include the transistor can be formed over asubstrate where the pixel portion is formed, whereby a system-on-panelcan be obtained. In this embodiment, an example of a display deviceusing the transistor examples of which are shown in the aboveembodiments is described with reference to FIGS. 9A to 9C, FIGS. 10A and10B, FIG. 11, and FIGS. 12A to 12C. FIGS. 10A, 10B, and FIG. 11 arecross-sectional views illustrating cross-sectional structures takenalong chain line M-N in FIG. 9B.

In FIG. 9A, a sealant 905 is provided so as to surround a pixel portion902 provided over a first substrate 901, and the pixel portion 902 issealed with a second substrate 906. In FIG. 9A, a signal line drivercircuit 903 and a scan line driver circuit 904 each are formed using asingle crystal semiconductor or a polycrystalline semiconductor over asubstrate prepared separately, and mounted in a region different fromthe region surrounded by the sealant 905 over the first substrate 901.Further, various signals and potentials are supplied to the signal linedriver circuit 903, the scan line driver circuit 904, and the pixelportion 902 from flexible printed circuits (FPCs) 918 a and 918 b.

In FIGS. 9B and 9C, the sealant 905 is provided so as to surround thepixel portion 902 and the scan line driver circuit 904 which areprovided over the first substrate 901. The second substrate 906 isprovided over the pixel portion 902 and the scan line driver circuit904. Thus, the pixel portion 902 and the scan line driver circuit 904are sealed together with a display element by the first substrate 901,the sealant 905, and the second substrate 906. In FIGS. 9B and 9C, asignal line driver circuit 903 which is formed using a single crystalsemiconductor or a polycrystalline semiconductor over a substrateseparately prepared is mounted in a region different from the regionsurrounded by the sealant 905 over the first substrate 901. In FIGS. 9Band 9C, various signals and potentials are supplied to the signal linedriver circuit 903, the scan line driver circuit 904, and the pixelportion 902 from an FPC 918.

Although FIGS. 9B and 9C each show an example in which the signal linedriver circuit 903 is formed separately and mounted on the firstsubstrate 901, one embodiment of the present invention is not limited tothis structure. The scan line driver circuit may be separately formedand then mounted, or only part of the signal line driver circuit or partof the scan line driver circuit may be separately formed and thenmounted.

Note that a connection method of a separately formed driver circuit isnot particularly limited, and a chip on glass (COG) method, a wirebonding method, a tape automated bonding (TAB) method, or the like canbe used. FIG. 9A shows an example in which the signal line drivercircuit 903 and the scan line driver circuit 904 are mounted by a COGmethod. FIG. 9B shows an example in which the signal line driver circuit903 is mounted by a COG method. FIG. 9C shows an example in which thesignal line driver circuit 903 is mounted by a TAB method.

The display device includes in its category a panel in which a displayelement is sealed and a module in which an IC including a controller orthe like is mounted on the panel.

A display device in this specification refers to an image displaydevice, a display device, or a light source (including a lightingdevice). Further, the display device also includes the following modulesin its category: a module to which a connector such as an FPC, a TABtape, or a TCP is attached; a module having a TCP at the tip of which aprinted wiring board is provided; and a module in which an integratedcircuit (IC) is directly mounted on a display element by a COG method.

The pixel portion and the scan line driver circuit provided over thefirst substrate include a plurality of transistors and any of thetransistors which are described in the above embodiments can be used.

As the display element provided in the display device, a liquid crystalelement (also referred to as a liquid crystal display element) or alight-emitting element (also referred to as a light-emitting displayelement) can be used. A light emitting element includes, in its scope,an element whose luminance is controlled by current or voltage, andspecifically includes an inorganic electroluminescent (EL) element, anorganic EL element, and the like. Further, a display medium whosecontrast is changed by an electric effect, such as electronic ink, canbe used.

A light-emitting device shown in FIG. 10A includes a connection terminalelectrode 915 and a terminal electrode 916. The connection terminalelectrode 915 and the terminal electrode 916 are electrically connectedto a terminal included in the FPC 918 through an anisotropic conductiveagent 919.

The connection terminal electrode 915 is formed using the sameconductive film as a first electrode 930, and the terminal electrode 916is formed using the same conductive film as a source electrode and adrain electrode (hereinafter, also referred to as a pair of electrodes)in each of a transistor 910 and a transistor 911.

A light-emitting device shown in FIG. 10B includes a connection terminalelectrodes 915 a, 915 b, and a terminal electrode 916. The connectionterminal electrodes 915 a, 915 b, and the terminal electrode 916 areelectrically connected to a terminal included in the FPC 918 through ananisotropic conductive agent 919.

The connection terminal electrode 915 a is formed using the sameconductive film as the first electrode 930, the connection terminalelectrode 915 b is formed using the same conductive film as a thirdelectrode 941, and the terminal electrode 916 is formed using the sameconductive film as a pair of electrodes in each of the transistor 910and the transistor 911.

Further, as illustrated in FIG. 11, the semiconductor device includes aconnection terminal electrode 955 and a terminal electrode 916. Theconnection terminal electrode 955 and the terminal electrode 916 areelectrically connected to a terminal included in the FPC 918 through ananisotropic conductive agent 919.

The connection terminal electrode 955 is formed using the sameconductive film as a second electrode 931, and the terminal electrode916 is formed using the same conductive film as a pair of electrodes ineach of a transistor 910 and a transistor 911.

Each of the pixel portion 902 and the scan line driver circuit 904 whichare provided over the first substrate 901 includes a plurality oftransistors. FIGS. 10A and 10B and FIG. 11 illustrate the transistor 910included in the pixel portion 902 and the transistor 911 included in thescan line driver circuit 904. In FIGS. 10A and 10B, an insulating film924 corresponding to the insulating film 412 in Embodiment 1 is providedin each of the transistor 910 and the transistor 911, and an interlayerinsulating film 921 functioning as a planarization film is furtherprovided over the insulating film 924. Note that the insulating film 923is an insulating film serving as a base film.

In this embodiment, any of the transistors described in the aboveembodiments can be used as the transistor 910 and the transistor 911.

Moreover, FIG. 11 shows an example in which a conductive film 917 isprovided over the insulating film 924 so as to overlap with a channelformation region of the semiconductor film of the transistor 911 for thedriver circuit. Note that an oxide semiconductor film is used as thesemiconductor film. By providing the conductive film 917 so as tooverlap with the channel formation region of the oxide semiconductorfilm, the amount of change in the threshold voltage of the transistor911 between before and after a BT stress test can be further reduced.The conductive film 917 may have the same potential as or a potentialdifferent from that of the gate electrode of the transistor 911, and theconductive film 917 can serve as a second gate electrode. The potentialof the conductive film 917 may be GND, 0 V or in a floating state.

In addition, the conductive film 917 has a function of blocking anexternal electric field. In other words, the conductive film 917 has afunction of preventing an external electric field (particularly, afunction of preventing static electricity) from affecting the inside (acircuit portion including the transistor). Such a blocking function ofthe conductive film 917 can prevent a change in electricalcharacteristics of the transistor due to the influence of an externalelectric field such as static electricity. The conductive film 917 canbe used for any of the transistors described in the above embodiments.

In the display panel, the transistor 910 included in the pixel portion902 is electrically connected to a display element. There is noparticular limitation on the kind of the display element as long asdisplay can be performed, and various kinds of display elements can beused.

The first electrode and the second electrode (each of which may becalled a pixel electrode, a common electrode, a counter electrode, orthe like) for applying voltage to the display element may havelight-transmitting properties or light-reflecting properties, whichdepends on the direction in which light is extracted, the position wherethe electrode is provided, and the pattern structure of the electrode.

The first electrode 930, the second electrode 931, and the thirdelectrode 941 can be formed using a light-transmitting conductivematerial such as indium oxide including tungsten oxide, indium zincoxide including tungsten oxide, indium oxide including titanium oxide,indium tin oxide including titanium oxide, indium tin oxide (hereinafterreferred to as ITO), indium zinc oxide, or indium tin oxide to whichsilicon oxide is added.

Alternatively, the first electrode 930, the second electrode 931, andthe third electrode 941 can be formed using one or more materialsselected from metals such as tungsten (W), molybdenum (Mo), zirconium(Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium(Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum(Al), copper (Cu), and silver (Ag); an alloy of any of these metals; anda nitride of any of these metals.

The first electrode 930, the second electrode 931, and the thirdelectrode 941 can be formed using a conductive composition including aconductive macromolecule (also referred to as a conductive polymer). Asthe conductive high molecule, what is called a π-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, a copolymer of two or more of aniline, pyrrole, andthiophene or a derivative thereof, and the like can be given.

An example of a liquid crystal display device using a liquid crystalelement as a display element is illustrated in FIGS. 10A and 10B. FIG.10A illustrates an example in which a vertical electric field method isemployed.

In FIG. 10A, a liquid crystal element 913 which is a display elementincludes the first electrode 930, a second electrode 931, and a liquidcrystal layer 908. Note that an insulating film 932 and an insulatingfilm 933 which serve as alignment films are provided so that the liquidcrystal layer 908 is provided therebetween. The second electrode 931 isprovided on the second substrate 906 side. The second electrode 931overlaps with the first electrode 930 with the liquid crystal layer 908provided therebetween.

In FIG. 10B, a liquid crystal element 943 which is a display elementincludes the first electrode 930, the third electrode 941, and theliquid crystal layer 908 which are formed over the interlayer insulatingfilm 921. The third electrode 941 functions as the common electrode. Aninsulating film 944 is provided between the first electrode 930 and thethird electrode 941. The insulating film 944 is formed using a siliconnitride film. An insulating film 932 and an insulating film 933 whichserve as alignment films are provided so that the liquid crystal layer908 is provided therebetween.

A spacer 935 is a columnar spacer obtained by selective etching of aninsulating film and is provided in order to control the distance betweenthe first electrode 930 and the second electrode 931 (a cell gap).Alternatively, a spherical spacer may be used.

In the case where a liquid crystal element is used as the displayelement, a thermotropic liquid crystal, a low-molecular liquid crystal,a high-molecular liquid crystal, a polymer-dispersed liquid crystal, aferroelectric liquid crystal, an anti-ferroelectric liquid crystal, orthe like can be used. Such a liquid crystal material exhibits acholesteric phase, a smectic phase, a cubic phase, a chiral nematicphase, an isotropic phase, or the like depending on a condition.

Alternatively, a liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while temperature of cholesteric liquidcrystal is raised. Since the blue phase appears only in a narrowtemperature range, a liquid crystal composition in which a chiralmaterial is mixed is used for the liquid crystal layer in order toimprove the temperature range. The liquid crystal composition whichincludes a liquid crystal showing a blue phase and a chiral agent has ashort response time of 1 msec or less, and has optical isotropy, whichmakes the alignment process unneeded and viewing angle dependence small.In addition, since an alignment film does not need to be provided andrubbing treatment is unnecessary, electrostatic discharge damage causedby the rubbing treatment can be prevented and defects and damage of theliquid crystal display device in the manufacturing process can bereduced. Thus, the productivity of the liquid crystal display device canbe increased.

The first substrate 901 and the second substrate 906 are fixed in placeby the sealant 925. As the sealant 925, an organic resin such as athermosetting resin or a photocurable resin can be used.

In the liquid crystal display device in FIG. 10A, the sealant 925 is incontact with a gate insulating film 922, and the interlayer insulatingfilm 921 is provided on an inner side than the sealant 925. Note thatthe gate insulating film 922 is formed by stacking a silicon nitridefilm and a silicon oxynitride film. Further, when the insulating film924 is selectively etched, it is preferable that the silicon nitridefilm be exposed by etching the silicon oxynitride film in the upperlayer of the gate insulating film 922. As a result, the sealant 925 isin contact with the silicon nitride film formed in the gate insulatingfilm 922, and entry of water from the outside into the sealant 925 canbe suppressed.

In the liquid crystal display device in FIG. 10B, the sealant 925 is incontact with the insulating film 924. The interlayer insulating film 921is provided on an inner side than the sealant 925 and the sealant 925 isin contact with the silicon nitride film on the surface of theinsulating film 924; thus, entry of water from the outside into thesealant 925 can be suppressed.

The size of storage capacitor formed in the liquid crystal displaydevice is set considering the leakage current of the transistor providedin the pixel portion or the like so that charge can be held for apredetermined period. By using the transistor including thehighly-purified oxide semiconductor film, it is enough to provide astorage capacitor having a capacitance that is ⅓ or less, preferably ⅕or less of a liquid crystal capacitance of each pixel; therefore, theaperture ratio of a pixel can be increased.

In the display device, a black matrix (a light-blocking film), anoptical member (an optical substrate) such as a polarizing member, aretardation member, or an anti-reflection member, and the like areprovided as appropriate. For example, circular polarization may beobtained by using a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

As a display method in the pixel portion, a progressive method, aninterlace method, or the like can be used. Further, color elementscontrolled in a pixel at the time of color display are not limited tothree colors: R, G, and B (R, G, and B correspond to red, green, andblue, respectively). For example, R, G, B, and W (W corresponds towhite), or R, G, B, and one or more of yellow, cyan, magenta, and thelike can be used. Further, the sizes of display regions may be differentbetween respective dots of color elements. The present invention is notlimited to the application to a display device for color display but canalso be applied to a display device for monochrome display.

FIGS. 12A to 12C illustrate an example of the display device in FIG. 10Ain which a common connection portion (pad portion) for electricallyconnecting to the second electrode 931 provided on the substrate 906 isformed over the substrate 901.

The common connection portion is provided in a position that overlapswith the sealant for bonding the substrate 901 and the substrate 906,and is electrically connected to the second electrode 931 throughconductive particles contained in the sealant. Alternatively, the commonconnection portion is provided in a position that does not overlap withthe sealant (except for the pixel portion) and a paste containingconductive particles is provided separately from the sealant so as tooverlap with the common connection portion, whereby the commonconnection portion is electrically connected to the second electrode931.

FIG. 12A is a cross-sectional view of the common connection portiontaken along a line I-J in the top view in FIG. 12B.

A common potential line 975 is provided over the gate insulating film922 and is formed using the same material and through the same steps asa source electrode 971 and a drain electrode 973 of the transistor 910illustrated in FIGS. 10A and 10B.

Further, the common potential line 975 is covered with the insulatingfilm 924 and the interlayer insulating film 921, and a plurality ofopenings is provided in the insulating film 924 and the interlayerinsulating film 921 at positions overlapping with the common potentialline 975. These openings are formed through the same steps as a contacthole which connects the first electrode 930 and one of the sourceelectrode 971 and the drain electrode 973 of the transistor 910.

Further, the common potential line 975 is connected to the commonelectrode 977 through the openings. The common electrode 977 is providedover the interlayer insulating film 921 and formed using the samematerial and through the same steps as the connection terminal electrode915 and the first electrode 930 in the pixel portion.

In this manner, the common connection portion can be manufactured in thesame process as the switching element in the pixel portion 902.

The common electrode 977 is an electrode in contact with the conductiveparticles contained in the sealant, and is electrically connected to thesecond electrode 931 of the substrate 906.

Alternatively, as illustrated in FIG. 12C, a common potential line 985may be formed using the same material and through the same steps as thegate electrode of the transistor 910.

In the common connection portion in FIG. 12C, the common potential line985 is provided under the gate insulating film 922, the insulating film924, and the interlayer insulating film 921, and a plurality of openingsis provided in the gate insulating film 922, the insulating film 924,and the interlayer insulating film 921 at positions overlapping with thecommon potential line 985. These openings are formed by etching theinsulating film 924 and the interlayer insulating film 921 and furtherselectively etching the gate insulating film 922, which are the samesteps as a contact hole which connects the first electrode 930 and oneof the source electrode 971 and the drain electrode 973 of thetransistor 910.

Further, the common potential line 985 is connected to the commonelectrode 987 through the openings. The common electrode 987 is providedover the interlayer insulating film 921 and formed using the samematerial and through the same steps as the connection terminal electrode915 and the first electrode 930 in the pixel portion.

Note that in the liquid crystal display device of an FFS mode in FIG.10B, the common electrodes 977 and 987 are each connected to the thirdelectrode 941.

Next, as the display element included in the display device, alight-emitting element utilizing electroluminescence can be used.Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In the organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. The dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. The thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that an example ofan organic EL element as a light-emitting element is described here.

In order to extract light emitted from the light-emitting element, it isacceptable as long as at least one of a pair of electrodes istransparent. A transistor and a light-emitting element are formed over asubstrate. The light-emitting element can have a top emission structurein which light emission is extracted through the surface opposite to thesubstrate; a bottom emission structure in which light emission isextracted through the surface on the substrate side; or a dual emissionstructure in which light emission is extracted through the surfaceopposite to the substrate and the surface on the substrate side, and alight-emitting element having any of these emission structures can beused.

An example of a light-emitting device using a light-emitting element asthe display element is shown in FIG. 11. A light-emitting element 963which is a display element is electrically connected to the transistor910 provided in the pixel portion 902. Note that although the structureof the light-emitting element 963 is a stacked-layer structure of thefirst electrode 930, a light-emitting layer 951, and the secondelectrode 931, the structure is not limited thereto. The structure ofthe light-emitting element 963 can be changed as appropriate dependingon the direction in which light is extracted from the light-emittingelement 963, or the like.

A silicon nitride film 950 is provided between the interlayer insulatingfilm 921 and the first electrode 930. The silicon nitride film 950 is incontact with side surfaces of the interlayer insulating film 921 and theinsulating film 924. A partition wall 960 is provided over end portionsof the silicon nitride film 950 and the first electrode 930. Thepartition wall 960 can be formed using an organic insulating material oran inorganic insulating material. It is particularly preferred that thepartition wall 960 be formed using a photosensitive resin material tohave an opening over the first electrode 930 so that a sidewall of theopening has an inclined surface with a continuous curvature.

The light-emitting layer 951 may be formed to have a single-layerstructure or a stacked-layer structure including a plurality of layers.

A protective layer may be formed over the second electrode 931 and thepartition wall 960 in order to prevent oxygen, hydrogen, moisture,carbon dioxide, or the like from entering the light-emitting element963. As the protective layer, a silicon nitride film, a silicon nitrideoxide film, an aluminum oxide film, an aluminum nitride film, analuminum oxynitride film, an aluminum nitride oxide film, a DLC film, orthe like can be formed. In addition, in a space which is sealed with thefirst substrate 901, the second substrate 906, and a sealant 936, afiller 964 is provided and sealed. It is preferred that, in this manner,the light-emitting element be packaged (sealed) with a protective film(such as a laminate film or an ultraviolet curable resin film) or acover material with high air-tightness and little degasification so thatthe panel is not exposed to the outside air.

As the sealant 936, an organic resin such as a thermosetting resin or aphotocurable resin, fritted glass including low-melting glass, or thelike can be used. The fritted glass is preferred because of its highbarrier property against impurities such as water and oxygen. Further,in the case where the fritted glass is used as the sealant 936, asillustrated in FIG. 11, the fritted glass is provided over the siliconnitride film 950, whereby adhesion of the silicon nitride film 950 tothe fritted glass becomes high and entry of water from the outside intothe sealant 936 can be prevented.

As the filler 964, as well as an inert gas such as nitrogen or argon, anultraviolet curable resin or a thermosetting resin can be used:polyvinyl chloride (PVC), an acrylic resin, polyimide, an epoxy resin, asilicone resin, polyvinyl butyral (PVB), ethylene vinyl acetate (EVA),or the like can be used. For example, nitrogen is used for the filler.

If necessary, an optical film such as a polarizing plate, a circularlypolarizing plate (including an elliptically polarizing plate), aretardation plate (a quarter-wave plate or a half-wave plate), or acolor filter may be provided as appropriate for a light-emitting surfaceof the light-emitting element. Further, a polarizing plate or acircularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

Since the transistor is easily broken owing to static electricity or thelike, a protective circuit for protecting the driver circuit ispreferred to be provided. The protection circuit is preferred to beformed using a nonlinear element.

As described above, by using any of the transistors described in theabove embodiments, a highly reliable semiconductor device having adisplay function can be provided.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 6

A semiconductor device having an image sensor function for reading dataof an object can be formed with the use of the transistor described inany of the above Embodiments.

An example of a semiconductor device having an image sensor function isillustrated in FIG. 13A. FIG. 13A illustrates an equivalent circuit of aphoto sensor, and FIG. 13B is a cross-sectional view illustrating partof the photo sensor.

In a photodiode 602, one electrode is electrically connected to aphotodiode reset signal line 658, and the other electrode iselectrically connected to a gate of a transistor 640. One of a sourceand a drain of the transistor 640 is electrically connected to a photosensor reference signal line 672, and the other of the source and thedrain thereof is electrically connected to one of a source and a drainof a transistor 656. A gate of the transistor 656 is electricallyconnected to a gate signal line 659, and the other of the source and thedrain thereof is electrically connected to a photo sensor output signalline 671.

Note that in circuit diagrams in this specification, a transistorincluding an oxide semiconductor film is denoted by a symbol “OS” sothat it can be identified as a transistor including an oxidesemiconductor film. In FIG. 13A, the transistor 640 and the transistor656 are each a transistor including an oxide semiconductor film, towhich the transistor described in any of the above embodiments can beapplied. In this embodiment, an example in which a transistor having astructure similar to that of the transistor 450 described in Embodiment1 is applied is described.

FIG. 13B is a cross-sectional view of the photodiode 602 and thetransistor 640 in the photosensor. The transistor 640 and the photodiode602 functioning as a sensor are provided over a substrate 601 (anelement substrate) having an insulating surface. A substrate 613 isprovided over the photodiode 602 and the transistor 640 with an adhesivelayer 608 interposed therebetween.

An insulating film 632, a planarization film 633, and a planarizationfilm 634 are provided over the transistor 640. The photodiode 602includes an electrode 641 b formed over the planarization film 633; afirst semiconductor film 606 a, a second semiconductor film 606 b, and athird semiconductor film 606 c over the electrode 641 b in this order;an electrode 642 which is provided over the planarization film 634 andelectrically connected to the electrode 641 b through the first to thirdsemiconductor films; and an electrode 641 a which is provided in thesame layer as the electrode 641 b and electrically connected to theelectrode 642.

The electrode 641 b is electrically connected to a conductive layer 643formed over the planarization film 634, and the electrode 642 iselectrically connected to a conductive film 645 through the electrode641 a. The conductive film 645 is electrically connected to a gateelectrode of the transistor 640, and thus the photodiode 602 iselectrically connected to the transistor 640.

Here, a pin photodiode in which a semiconductor film having p-typeconductivity type as the first semiconductor film 606 a, ahigh-resistance semiconductor film (i-type semiconductor film) as thesecond semiconductor film 606 b, and a semiconductor film having n-typeconductivity type as the third semiconductor film 606 c are stacked isillustrated as an example.

The first semiconductor film 606 a is a p-type semiconductor film andcan be formed using an amorphous silicon film containing an impurityelement imparting p-type conductivity. The first semiconductor film 606a is formed by a plasma CVD method with the use of a semiconductorsource gas containing an impurity element belonging to Group 13 (e.g.,boron (B)). As the semiconductor material gas, silane (SiH₄) may beused. Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the likemay be used. Further alternatively, an amorphous silicon film which doesnot contain an impurity element may be formed, and then, an impurityelement may be introduced to the amorphous silicon film with use of adiffusion method or an ion injecting method.

Heating or the like may be conducted after introducing the impurityelement by an ion implantation method or the like in order to diffusethe impurity element. In that case, as a method of forming the amorphoussilicon film, an LPCVD method, a chemical vapor deposition method, asputtering method, or the like may be used. The first semiconductor film606 a is preferably formed to a thickness greater than or equal to 10 nmand less than or equal to 50 nm.

The second semiconductor film 606 b is an i-type semiconductor film(intrinsic semiconductor film) and is formed using an amorphous siliconfilm. As for formation of the second semiconductor film 606 b, anamorphous silicon film is formed by a plasma CVD method with the use ofa semiconductor source gas. As the semiconductor material gas, silane(SiH₄) may be used. Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄,or the like may be used. The second semiconductor film 606 b may beformed by an LPCVD method, a vapor deposition method, a sputteringmethod, or the like. The second semiconductor film 606 b is preferablyformed to have a thickness greater than or equal to 200 nm and less thanor equal to 1000 nm.

The third semiconductor film 606 c is an n-type semiconductor film andis formed using an amorphous silicon film containing an impurity elementimparting n-type conductivity. The third semiconductor film 606 c isformed by a plasma CVD method with the use of a semiconductor source gascontaining an impurity element belonging to Group 15 (e.g., phosphorus(P)). As the semiconductor material gas, silane (SiH₄) may be used.Alternatively, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like may beused. Further alternatively, an amorphous silicon film which does notcontain an impurity element may be formed, and then, an impurity elementmay be introduced to the amorphous silicon film with use of a diffusionmethod or an ion injecting method. Heating or the like may be conductedafter introducing the impurity element by an ion implantation method orthe like in order to diffuse the impurity element. In that case, as amethod of forming the amorphous silicon film, an LPCVD method, achemical vapor deposition method, a sputtering method, or the like maybe used. The third semiconductor film 606 c is preferably formed to havea thickness greater than or equal to 20 nm and less than or equal to 200nm.

The first semiconductor film 606 a, the second semiconductor film 606 b,and the third semiconductor film 606 c are not necessarily formed usingan amorphous semiconductor, and may be formed using a polycrystallinesemiconductor or a semi-amorphous semiconductor (SAS).

In addition, the mobility of holes generated by the photoelectric effectis lower than the mobility of electrons. Therefore, a PIN photodiode hasbetter characteristics when a surface on the p-type semiconductor filmside is used as a light-receiving plane. Here, an example in which lightreceived by the photodiode 602 from a surface of the substrate 601, overwhich the pin photodiode is formed, is converted into electric signalsis described. Light from the semiconductor film having a conductivitytype opposite to that of the semiconductor film on the light-receivingplane is disturbance light; therefore, the electrode is preferablyformed using a light-blocking conductive film. Note that the n-typesemiconductor film side may alternatively be a light-receiving plane.

The insulating film 632, the planarization film 633, and theplanarization film 634 can be formed using an insulating material by asputtering method, a plasma CVD method, spin coating, dipping, spraycoating, a droplet discharge method (such as an inkjet method), screenprinting, offset printing, or the like depending on the material. Notethat as the insulating film 632, an insulating film similar to theinsulating film 412 of Embodiment 1 is used.

For the planarization films 633 and 634, for example, an organicinsulating material having heat resistance, such as polyimide, acrylicresin, a benzocyclobutene-based resin, polyamide, or epoxy resin, can beused. Other than such organic insulating materials, it is possible touse a single layer or stacked layers of a low-dielectric constantmaterial (a low-k material), a siloxane-based resin, phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), or the like.

With detection of light that enters the photodiode 602, data on anobject to be detected can be read. Note that a light source such as abacklight can be used at the time of reading information on an object.

The structure, method, and the like described in this embodiment can beused in combination with structures, methods, and the like described inother embodiments and examples, as appropriate.

Embodiment 7

A semiconductor device disclosed in this specification can be applied toa variety of electronic devices (including game machines). Examples ofelectronic devices include a television set (also referred to as atelevision or a television receiver), a monitor of a computer or thelike, cameras such as a digital camera and a digital video camera, adigital photo frame, a mobile phone, a portable game machine, a portableinformation terminal, an audio reproducing device, a game machine (e.g.,a pachinko machine or a slot machine), a game console, and the like.Specific examples of these electronic devices are illustrated in FIGS.14A to 14C.

FIG. 14A illustrates a table 9000 having a display portion. In the table9000, a display portion 9003 is incorporated in a housing 9001 and animage can be displayed on the display portion 9003. Note that thehousing 9001 is supported by four leg portions 9002. Further, a powercord 9005 for supplying power is provided for the housing 9001.

The transistor described in any of the above embodiments can be used forthe display portion 9003, so that the electronic device can have highreliability.

The display portion 9003 has a touch-input function. When a user touchesdisplayed buttons 9004 which are displayed on the display portion 9003of the table 9000 with his/her finger or the like, the user can carryout operation of the screen and input of information. Further, when thetable may be made to communicate with home appliances or control thehome appliances, the table 9000 may function as a control device whichcontrols the home appliances by operation on the screen. For example,with use of the semiconductor device having an image sensor described inEmbodiment 6, the display portion 9003 can function as a touch panel.

Further, the screen of the display portion 9003 can be placedperpendicular to a floor with a hinge provided for the housing 9001;thus, the table 9000 can also be used as a television device. When atelevision device having a large screen is set in a small room, an openspace is reduced; however, when a display portion is incorporated in atable, a space in the room can be efficiently used.

FIG. 14B illustrates a television set 9100. In the television set 9100,a display portion 9103 is incorporated in a housing 9101 and an imagecan be displayed on the display portion 9103. Note that the housing 9101is supported by a stand 9105 here.

The television set 9100 can be operated with an operation switch of thehousing 9101 or a separate remote controller 9110. Channels and volumecan be controlled with an operation key 9109 of the remote controller9110 so that an image displayed on the display portion 9103 can becontrolled. Furthermore, the remote controller 9110 may be provided witha display portion 9107 for displaying data output from the remotecontroller 9110.

The television set 9100 illustrated in FIG. 14B is provided with areceiver, a modem, and the like. With the use of the receiver, thetelevision set 9100 can receive general TV broadcasts. Moreover, whenthe television set 9100 is connected to a communication network with orwithout wires via the modem, one-way (from a sender to a receiver) ortwo-way (between a sender and a receiver or between receivers)information communication can be performed.

The transistor described in any of the above embodiments can be used inthe display portions 9103 and 9107, so that the television set and theremote controller can have high reliability.

FIG. 14C illustrates a computer, which includes a main body 9201, ahousing 9202, a display portion 9203, a keyboard 9204, an externalconnection port 9205, a pointing device 9206, and the like.

The transistor described in any of the above embodiments can be used forthe display portion 9203, so that the computer can have highreliability.

FIGS. 15A and 15B illustrate a tablet terminal that can be folded. InFIG. 15A, the tablet terminal is opened, and includes a housing 9630, adisplay portion 9631 a, a display portion 9631 b, a display-modeswitching button 9034, a power button 9035, a power-saving-modeswitching button 9036, a clip 9033, and an operation button 9038.

The transistor described in any of the above embodiments can be used forthe display portion 9631 a and the display portion 9631 b, so that thetablet terminal can have high reliability.

Part of the display portion 9631 a can be a touch panel region 9632 a,and data can be input by touching operation keys 9638 that aredisplayed. Although a structure in which a half region in the displayportion 9631 a has only a display function and the other half regionalso has a touch panel function is shown as an example, the displayportion 9631 a is not limited to the structure. However, the structureof the display portion 9631 a is not limited to this, and all the areaof the display portion 9631 a may have a touch panel function. Forexample, all the area of the display portion 9631 a can display keyboardbuttons and serve as a touch panel while the display portion 9631 b canbe used as a display screen.

In the display portion 9631 b, as in the display portion 9631 a, part ofthe display portion 9631 b can be a touch panel region 9632 b. When afinger, a stylus, or the like touches the place where a button 9639 forswitching to keyboard display is displayed in the touch panel, keyboardbuttons can be displayed on the display portion 9631 b.

Touch input can be performed concurrently on the touch panel regions9632 a and 9632 b.

The display-mode switching button 9034 allows switching between alandscape mode and a portrait mode, color display and black-and-whitedisplay, and the like. With the power-saving-mode switching button 9036for switching to power-saving mode, the luminance of display can beoptimized in accordance with the amount of external light at the timewhen the tablet is in use, which is detected with an optical sensorincorporated in the tablet. The tablet terminal may include anotherdetection device such as a sensor for detecting orientation (e.g., agyroscope or an acceleration sensor) in addition to the optical sensor.

Although the display portion 9631 a and the display portion 9631 b havethe same display area in FIG. 15A, one embodiment of the presentinvention is not limited to this example. The display portion 9631 a andthe display portion 9631 b may have different areas or different displayquality. For example, one of them may be a display panel that candisplay higher-definition images than the other.

FIG. 15B illustrates the tablet terminal folded, which includes thehousing 9630, a solar battery 9633, and a charge and discharge controlcircuit 9634. Note that FIG. 15B shows an example in which the chargeand discharge control circuit 9634 includes a battery 9635 and a DCDCconverter 9636.

Since the tablet terminal can be folded in two, the housing 9630 can beclosed when the tablet terminal is not in use. Thus, the displayportions 9631 a and 9631 b can be protected, thereby providing a tabletterminal with high endurance and high reliability for long-term use.

The tablet terminal illustrated in FIGS. 15A and 15B can also have afunction of displaying various kinds of data (e.g., a still image, amoving image, and a text image), a function of displaying a calendar, adate, the time, or the like on the display portion, a touch-inputfunction of operating or editing data displayed on the display portionby touch input, a function of controlling processing by various kinds ofsoftware (programs), and the like.

The solar battery 9633, which is attached on the surface of the tabletterminal, supplies electric power to a touch panel, a display portion,an image signal processor, and the like. Note that the solar battery9633 can be provided on one or two surfaces of the housing 9630, so thatthe battery 9635 can be charged efficiently. When a lithium ion batteryis used as the battery 9635, there is an advantage of downsizing or thelike.

The structure and operation of the charge and discharge control circuit9634 illustrated in FIG. 15B are described with reference to a blockdiagram of FIG. 15C. The solar battery 9633, the battery 9635, the DCDCconverter 9636, a converter 9637, switches SW1 to SW3, and the displayportion 9631 are illustrated in FIG. 15C, and the battery 9635, the DCDCconverter 9636, the converter 9637, and the switches SW1 to SW3correspond to the charge and discharge control circuit 9634 illustratedin FIG. 15B.

First, an example of operation in the case where power is generated bythe solar battery 9633 using external light is described. The voltage ofpower generated by the solar battery 9633 is raised or lowered by theDCDC converter 9636 so that a voltage for charging the battery 9635 isobtained. When the display portion 9631 is operated with the power fromthe solar battery 9633, the switch SW1 is turned on and the voltage ofthe power is raised or lowered by the converter 9637 to a voltage neededfor operating the display portion 9631. In addition, when display on thedisplay portion 9631 is not performed, the switch SW1 is turned off anda switch SW2 is turned on so that charge of the battery 9635 may beperformed.

Here, the solar battery 9633 is shown as an example of a powergeneration means; however, there is no particular limitation on a way ofcharging the battery 9635, and the battery 9635 may be charged withanother power generation means such as a piezoelectric element or athermoelectric conversion element (Peltier element). For example, thebattery 9635 may be charged with a non-contact power transmission modulewhich is capable of charging by transmitting and receiving power bywireless (without contact), or another charging means may be used incombination.

The structure, method, and the like described in this embodiment can beused in combination with structures, methods, and the like described inother embodiments, as appropriate.

Example 1

In this example, observation results of a cross section of a stepportion of a source electrode and a drain electrode of a transistor in asemiconductor device according to the disclosed invention is described.

First, a method for manufacturing a transistor of an example sample isdescribed.

A gate electrode was formed over the glass substrate first. A100-nm-thick tungsten film was formed by a sputtering method. A mask wasformed over the tungsten film by a photolithography process, and part ofthe tungsten film was etched using the mask, so that the gate electrodewas formed.

Next, a gate insulating film was formed over the gate electrode. As thegate insulating film, a stacked layer of a 50-nm-thick silicon nitridefilm and a 200-nm-thick silicon oxynitride film was formed. The siliconnitride film was formed under the following conditions: silane with aflow rate of 50 sccm and nitrogen with a flow rate of 5000 sccm weresupplied to a treatment chamber of a plasma CVD apparatus; the pressurein the treatment chamber was controlled to be 60 Pa; and the power of150 W was supplied with the use of a 27.12 MHz high-frequency powersource. The silicon oxynitride film was formed under the followingconditions: silane with a flow rate of 20 sccm and dinitrogen monoxidewith a flow rate of 3000 sccm were supplied to a treatment chamber ofthe plasma CVD apparatus; the pressure in the treatment chamber wascontrolled to be 40 Pa; and the power of 100 W was supplied with the useof a 27.12 MHz high-frequency power source. Note that each of thesilicon nitride film and the silicon oxynitride film was formed at asubstrate temperature of 350° C.

Next, an oxide semiconductor film was formed so as to overlap with thegate electrode with the gate insulating film provided therebetween.Here, an IGZO film which was a CAAC-OS film was formed over the gateinsulating film by a sputtering method, a mask was formed over the IGZOfilm by a photolithography process, and the IGZO film was partly etchedusing the mask. Then, the etched IGZO film was subjected to heattreatment, so that the oxide semiconductor film was formed. Note thatthe IGZO film formed in this example has a thickness of 35 nm.

The IGZO film was formed under the following conditions: a sputteringtarget containing In, Ga, and Zn at an atomic ratio of 1:1:1 was used;argon with a flow rate of 50 sccm and oxygen with a flow rate of 50 sccmwere supplied as a sputtering gas to a treatment chamber of a sputteringapparatus; the pressure in the treatment chamber was controlled to be0.6 Pa; and the direct current power of 5 kW was supplied. Note that theIGZO film was formed at a substrate temperature of 170° C.

Next, water, hydrogen, and the like contained in the oxide semiconductorfilm were released by heat treatment. Here, heat treatment at 450° C.for one hour in a nitrogen atmosphere was performed, and then heattreatment at 450° C. for one hour in an atmosphere of nitrogen andoxygen was performed.

Then, a conductive film was formed over the gate insulating film and theoxide semiconductor film, a mask was formed over the conductive film bya photolithography process, and the conductive film was partly etchedusing the mask, so that a source electrode and a drain electrode wereformed. Note that as the conductive film to be the source electrode andthe drain electrode, a 400-nm-thick aluminum film was formed over a50-nm-thick tungsten film, and a 100-nm-thick titanium film was formedover the aluminum film.

Next, after the substrate was moved to a treatment chamber under reducedpressure and heated at 220° C., the substrate was moved to a treatmentchamber filled with dinitrogen monoxide. Then, the oxide semiconductorfilm was exposed to oxygen plasma which was generated in such a mannerthat an upper electrode provided in the treatment chamber was suppliedwith a high-frequency power of 150 W with the use of a 27.12 MHzhigh-frequency power source.

Next, an insulating film was formed in succession over the oxidesemiconductor film, the source electrode, and the drain electrodewithout exposure to the atmosphere after the above plasma treatment. Theinsulating film was formed using four conditions which are a conditionA1, a condition A2, a condition A3, and a condition A4. The sampleformed using the condition A1 is referred to as a sample A1. The sampleformed using the condition A2 is referred to as a sample A2. The sampleformed using the condition A3 is referred to as a sample A3. The sampleformed using the condition A4 is referred to as a sample A4. The samplesA1 to A4 each have the insulating film with a thickness of 400 nm.

In the condition 1, a silicon oxynitride film was used as the insulatingfilm. The silicon oxynitride film was formed by a plasma CVD methodunder the following conditions: silane with a flow rate of 30 sccm anddinitrogen monoxide with a flow rate of 4000 sccm were used as thesource gas; the pressure in a treatment chamber was 40 Pa; the substratetemperature was 220° C.; and a high-frequency power of 150 W wassupplied to parallel plate electrodes. Note that when the entire filmwas measured by XRR, the film density was 2.26 g/cm³.

In the condition 2, a silicon oxynitride film was used as the insulatingfilm. The silicon oxynitride film was formed by a plasma CVD methodunder the following conditions: silane with a flow rate of 160 sccm anddinitrogen monoxide with a flow rate of 4000 sccm were used as thesource gas; the pressure in a treatment chamber was 200 Pa; thesubstrate temperature was 220° C.; and a high-frequency power of 1500 Wwas supplied to parallel plate electrodes. Note that when the entirefilm was measured by XRR, the film density was 2.31 g/cm³.

In the condition 3, a silicon nitride film was used as the insulatingfilm. The silicon nitride film was formed by a plasma CVD method underthe following conditions: silane with a flow rate of 50 sccm, nitrogenwith a flow rate of 5000 sccm, and ammonia with a flow rate of 100 sccmwere used as the source gas; the pressure in a treatment chamber was 200Pa; the substrate temperature was 220° C.; and a high-frequency power of1000 W was supplied to parallel plate electrodes. Note that when theentire film was measured by XRR, the film density was 2.50 g/cm³.

In the condition 4, a silicon nitride film was used as the insulatingfilm. The silicon nitride film was formed by a plasma CVD method underthe following conditions: silane with a flow rate of 200 sccm, nitrogenwith a flow rate of 2000 sccm, and ammonia with a flow rate of 100 sccmwere used as the source gas; the pressure in a treatment chamber was 200Pa; the substrate temperature was 350° C.; and a high-frequency power of2000 W was supplied to parallel plate electrodes. Note that when theentire film was measured by XRR, the film density was 2.72 g/cm³.

Cross sections of the samples A1 to A4 were observed by scanningtransmission electron microscopy (STEM). FIG. 16A shows a STEM image ofthe sample A1, FIG. 16B shows a STEM image of the sample A2, FIG. 17Ashows a STEM image of the sample A3, and FIG. 17B shows a STEM image ofthe sample A4.

As illustrated in FIGS. 16A and 16B and FIG. 17A, it was observed that avoid portion is generated in a portion surrounded by a dotted line inthe insulating film covering the source electrode and the drainelectrode. On the other hand, in FIG. 17B, generation of a void portionin the insulating film covering the source electrode and the drainelectrode was not observed.

Thus, it was shown that in the samples A1 to A4, a void portion isgenerated in the insulating film covering the source electrode and thedrain electrode when the film density is higher than or equal to 2.26g/cm³ and lower than or equal to 2.50 g/cm³.

Example 2

In this example, measurement results of characteristics of a transistorin which a nitride insulating film is formed over an oxide insulatingfilm are described.

First, a method for manufacturing a transistor of an example sample isdescribed.

In this example, a gate electrode, a gate insulating film, and an oxidesemiconductor film were formed over a glass substrate, and water,hydrogen, and the like contained in the oxide semiconductor film werereleased by heat treatment as in Example 1. Here, heat treatment at 450°C. for one hour in a nitrogen atmosphere was performed, and then heattreatment at 450° C. for one hour in an atmosphere of nitrogen andoxygen was performed.

Next, a conductive film was formed over the gate insulating film and theoxide semiconductor film, a mask was formed over the conductive film bya photolithography process, and the conductive film was partly etchedusing the mask, so that a source electrode and a drain electrode wereformed.

Next, after the substrate was moved to a treatment chamber under reducedpressure and heated at 220° C., the substrate was moved to a treatmentchamber filled with dinitrogen monoxide. Then, the oxide semiconductorfilm was exposed to oxygen plasma which was generated in such a mannerthat an upper electrode provided in the treatment chamber was suppliedwith a high-frequency power of 150 W with the use of a 27.12 MHzhigh-frequency power source.

Example 1 can be referred to for the steps up to here.

Next, the insulating film was formed in succession over the oxidesemiconductor film, the source electrode, and the drain electrodewithout exposure to the atmosphere after the above plasma treatment. Theinsulating film has a stacked-layer structure in which a nitrideinsulating film is formed over an oxide insulating film. The oxideinsulating film was formed by stacking a 50-nm-thick first siliconoxynitride film and a 400-nm-thick second silicon oxynitride film.

The first silicon oxynitride film was formed by a plasma CVD methodunder the following conditions: silane with a flow rate of 30 sccm anddinitrogen monoxide with a flow rate of 4000 sccm were used as thesource gas; the pressure in a treatment chamber was 40 Pa; the substratetemperature was 220° C.; and a high-frequency power of 150 W wassupplied to parallel plate electrodes.

The second silicon oxynitride film was formed by a plasma CVD methodunder the following conditions: silane with a flow rate of 160 sccm anddinitrogen monoxide with a flow rate of 4000 sccm were used as thesource gas; the pressure in a treatment chamber was 200 Pa; thesubstrate temperature was 220° C.; and a high-frequency power of 1500 Wwas supplied to parallel plate electrodes. Under the above conditions,it is possible to form a silicon oxynitride film which contains moreoxygen than in the stoichiometric composition and from which part ofoxygen is released by heating.

Next, water, hydrogen, and the like contained in the oxide insulatingfilm were released by heat treatment. Here, the heat treatment wasperformed at 350° C. under a mixed atmosphere of nitrogen and oxygen forone hour.

Next, a nitride insulating film was formed over the oxide insulatingfilm. As the nitride insulating film, a 50-nm-thick silicon nitride filmwas formed. The silicon nitride film was formed by a plasma CVD methodunder the following conditions:

silane with a flow rate of 200 sccm, nitrogen with a flow rate of 2000sccm, and ammonia with a flow rate of 100 sccm were used as the sourcegas; the pressure in a treatment chamber was 100 Pa; the substratetemperature was 350° C.; and a high-frequency power of 2000 W wassupplied to parallel plate electrodes.

Next, a part of the insulating film (the oxide insulating film and thenitride insulating film) was etched and an opening exposing a part ofthe source electrode or the drain electrode was formed.

Next, an interlayer insulating film was formed over the insulating film(the nitride insulating film). Here, the nitride insulating film wascoated with a composition, and exposure and development were performed,so that the interlayer insulating film having an opening through which apart of the source electrode or the drain electrode is exposed wasformed from the composition. Note that a 1.5-μm-thick acrylic resin wasformed as the interlayer insulating film. After that, heat treatment wasperformed. The heat treatment was performed at a temperature of 250° C.in a nitrogen atmosphere for one hour.

Next, a conductive film, which is connected to a part of the sourceelectrode or the drain electrode, was formed. Here, a 100-nm-thick ITOfilm containing silicon oxide was formed by a sputtering method.

Through the above steps, the transistor of the example sample wasmanufactured.

Further, as a comparative example, a transistor in a comparative sample,in which only an oxide insulating film is formed as an insulating filmand a nitride insulating film is not formed, was manufactured.

Cross sections of the example sample and the comparative sample wereobserved by scanning transmission electron microscopy (STEM). FIG. 18Ashows a STEM image of the example sample and FIG. 18B shows a STEM imageof the comparative sample.

As illustrated in FIGS. 18A and 18B, it was observed that a void portionis generated in a portion surrounded by a dotted line in the firstsilicon oxynitride film and the second silicon oxynitride film whichcover the source electrode and the drain electrode. Further, asillustrated in FIG. 18A, a void portion is not generated in the siliconnitride film over the second silicon oxynitride film. It was found thatthe void portion in the first silicon oxynitride film and the secondsilicon oxynitride film is covered with the silicon nitride film.

Next, Vg-Id characteristics of the transistors in the above-describedexample sample and comparative sample were measured.

A pressure cooker test (PCT) was performed as the accelerated life testto evaluate moisture resistance. In the PCT in this example, the examplesample and the comparative sample were held for one hour under thefollowing conditions: the temperature was 130° C.; the humidity was 85%;and the pressure was 0.23 MPa.

A gate bias temperature (GBT) stress test was performed on each of theexample sample and the comparative sample. In this example, the GBTstress test was performed in a dark environment under the followingconditions: Vg=−30 V; Vd=0 V; Vs=0 V; stress temperature=60° C.; nolight emission; and stress application time=one hour. The measuredvalues of the channel length (L), the channel width (W), and thethickness of the oxide film (gate insulating film) (Tox) were 6 μm, 50μm, and 280 nm, respectively.

FIG. 19A shows results of the GBT stress test performed on the examplesample and FIG. 19B shows results of the GBT stress test performed onthe comparative sample. In the graphs, dotted lines indicate results ofmeasurement performed before the PCT and solid lines indicate results ofmeasurement performed after the PCT. In FIGS. 19A and 19B, themeasurement results when the drain voltage (Vd: [V]) was set to 1 V andwhen the drain voltage (Vd: [V]) was set to 10 V are shown, and thehorizontal axis indicates a gate voltage (Vg: [V]) and the vertical axisindicates a drain current (Id: [A]). Note that “drain voltage (Vd: [V])”refers to a potential difference between a drain and a source when thepotential of the source is used as a reference potential, and “gatevoltage (Vg: [V])” refers to a potential difference between a gate and asource when the potential of the source is used as a referencepotential.

As shown in FIG. 19A, the transistor in the example sample did notchange significantly after the PCT. On the other hand, as shown in FIG.19B, the transistor in the comparative sample changed significantlyafter the PCT, and it is found that the threshold value is shifted inthe negative direction after the PCT.

The difference between the example sample and the comparative sample iswhether or not the silicon nitride film is provided over the secondsilicon oxynitride film. Thus, it is found that the amount of change incharacteristics can be reduced by the effect of the silicon nitride filmeven after the PCT.

Consequently, by covering the void portion in the silicon oxynitridefilm with the silicon nitride film, a semiconductor device using anoxide semiconductor can have stable electrical characteristics and highreliability.

Example 3

In this example, measurement results of characteristics of transistorswhose nitride insulating films over oxide insulating films weredeposited at different temperatures are described.

First, a method for manufacturing a transistor of an example sample isdescribed.

As example samples, a sample in which the deposition temperature of thesilicon nitride film in the example sample in Example 2 is 220° C. isreferred to as a sample B1 and a sample similar to the example sample inExample 2 (a sample in which the deposition temperature of the siliconnitride film is 350° C.) is referred to as a sample B2.

The silicon nitride film of the sample B1 was formed by a plasma CVDmethod under the following conditions: silane with a flow rate of 50sccm, nitrogen with a flow rate of 5000 sccm, and ammonia with a flowrate of 100 sccm were used as the source gas; the pressure in thetreatment chamber was 200 Pa; the substrate temperature was 220° C.; anda high-frequency power of 1000 W was supplied to parallel plateelectrodes. A formation method of the silicon nitride film in the sampleB2 is similar to that in the sample B1 except that the substratetemperature of the silicon nitride film was 350° C.

Next, Vg-Id characteristics of the transistors in the above-describedsample B1 and sample B2 were measured.

A pressure cooker test (PCT) was performed as the accelerated life testto evaluate moisture resistance. In the PCT in this example, the sampleB1 and the sample B2 were held for one hour under the followingconditions: the temperature was 130° C.; the humidity was 85%; and thepressure was 0.20 MPa.

A GBT stress test was performed on each of the sample B1 and the sampleB2. In this example, the GBT stress test was performed in a darkenvironment under the following conditions: Vg=−30 V to 30 V; Vd=0 V;Vs=0 V; stress temperature=60° C.; no light emission; and stressapplication time=one hour. The measured values of the channel length(L), the channel width (W), and the thickness of the oxide film (gateinsulating film) (Tox) were 6 μm, 50 μm, and 280 nm, respectively.

FIG. 20A1 shows results of the GBT stress test performed on the sampleB1 before the PCT and FIG. 20A2 shows results of the GBT stress testperformed on the sample B1 after the PCT. FIG. 20B1 shows results of theGBT stress test performed on the sample B2 before the PCT and FIG. 20B2shows results of the GBT stress test performed on the sample B2 afterthe PCT. In FIGS. 20A1, 20A2, 20B1, and 20B2, the measurement resultswhen the drain voltage (Vd: [V]) was set to 1 V and when the drainvoltage (Vd: [V]) was set to 10 V are shown, and the horizontal axisindicates a gate voltage (Vg: [V]) and the vertical axis indicates adrain current (Id: [A]) and a field effect mobility (μFE [cm²/Vs]). InFIGS. 20A3 and 20B3, amounts of variation in threshold voltage (ΔVth)and amounts of variation in shift value (ΔShift) between before andafter the PCT in the samples B1 and B2 are shown.

In this specification, in a curve where the horizontal axis indicatesthe gate voltage (Vg: [V]) and the vertical axis indicates the squareroot of drain current (Id^((1/2)): [A]), the threshold voltage (Vth) isdefined as a gate voltage at a point of intersection of an extrapolatedtangent line of Id^((1/2)) having the highest inclination with the Vgaxis (i.e., d^((1/2)) of 0 A). Note that in this specification, thethreshold voltage is calculated with a drain voltage Vd of 10 V.

In this specification, in a curve where the horizontal axis indicatesthe gate voltage (Vg: [V]) and the vertical axis indicates the logarithmof drain current (Id: [A]), the shift value (Shift) is defined as a gatevoltage at a point of intersection of an extrapolated tangent line of Idhaving the highest inclination with a straight line of Id=1.0×10⁻¹² [A].Note that in this specification, the shift value is calculated with adrain voltage Vd of 10 V.

As shown in FIGS. 20A3 and 20B3, it is found that the threshold voltageand the shift value of the transistors in the samples B1 and B2 slightlyvary after the PCT and the transistors deteriorate. Further, it is foundthat the amount of change in threshold voltage and shift value of thetransistor in the sample B2 (in which the deposition temperature of thesilicon nitride film is 350° C.) is smaller than in the sample B1 (inwhich the deposition temperature of the silicon nitride film is 220°C.).

Example 4

In this example, results of Rutherford backscattering spectrometry (RBS)analysis and results of the evaluation by secondary ion massspectrometry (SIMS) which are performed on a silicon nitride film whichis part of an insulating film are described.

First, samples which were analyzed are described.

The sample was manufactured by forming a silicon nitride film 12 over asilicon wafer 11 by a plasma CVD method (see FIG. 21). The siliconnitride film 12 was formed using two conditions which are a condition C1and a condition C2. The sample formed using the condition C1 is referredto as a sample C1. The sample formed using the condition C2 is referredto as a sample C2.

In the condition C1, the silicon nitride film 12 with a thickness of 100nm was formed by a plasma CVD method under the following conditions: thetemperature at which the silicon wafer 11 was held was 220° C.; silanewith a flow rate of 50 sccm, nitrogen with a flow rate of 5000 sccm, andammonia with a flow rate of 100 sccm were used as the source gas; thepressure in a treatment chamber was 200 Pa; and a high-frequency powerof 1000 W was supplied to parallel plate electrodes.

In the condition C2, the silicon nitride film 12 with a thickness of 300nm was formed by a plasma CVD method under the following conditions: thetemperature at which the silicon wafer 11 was held was 350° C.; silanewith a flow rate of 200 sccm, nitrogen with a flow rate of 2000 sccm,and ammonia with a flow rate of 100 sccm were used as the source gas;the pressure in a treatment chamber was 200 Pa; and a high-frequencypower of 2000 W was supplied to parallel plate electrodes.

Then, the sample C1 and the sample C2 were evaluated. The results of RBSare shown in Table 1.

TABLE 1 Silicon nitride film formation temperature 220° C. 350° C.Composition [%] Si 26.5% 40.0% N 45.5% 49.2% H 28.1% 10.8% RBS density[g/cm³] 2.1 2.6

In the sample C1, silicon, nitrogen, and hydrogen are contained at 26.5atomic %, 45.5 atomic %, and 28.1 atomic %, respectively. In the sampleC2, silicon, nitrogen, and hydrogen are contained at 40.0 atomic %, 49.2atomic %, and 10.8 atomic %, respectively. Thus, the proportion ofhydrogen in the sample C2 is lower than in the sample C1.

Next, FIGS. 22A and 22B show SIMS analysis results.

FIG. 22A shows concentration profiles of hydrogen, oxygen, fluorine, andcarbon in the sample C1 obtained by SIMS and FIG. 22B showsconcentration profiles of hydrogen, oxygen, fluorine, and carbon in thesample C2 obtained by SIMS.

Further, details of results of SIMS analysis in FIGS. 22A and 22B areshown in Table 2.

TABLE 2 Atom density in the silicon nitride film [atoms/cm³] Siliconnitride film formation temperature 220° C. 350° C. Quantitative H 2.8 ×10²² 1.6 × 10²² elemental O 1.0 × 10¹⁹ 6.8 × 10¹⁷ analysis F 2.3 × 10¹⁹7.4 × 10¹⁸ results C 5.5 × 10¹⁸ 7.4 × 10¹⁷

In the sample C1, hydrogen, oxygen, fluorine, and carbon are containedat 2.8×10²² atoms/cm³, 1.0×10¹⁹ atoms/cm³, 2.3×10¹⁹ atoms/cm³, and5.5×10¹⁸ atoms/cm³, respectively. In the sample C2, hydrogen, oxygen,fluorine, and carbon are contained at 1.6×10²² atoms/cm³, 6.8×10¹⁷atoms/cm³, 7.4×10¹⁸ atoms/cm³, and 7.4×10¹⁷ atoms/cm³, respectively.Thus, like the results of RBS, the results of SIMS analysis indicatethat the proportion of hydrogen in the sample C2 is lower than in thesample C1. Further, the concentration of impurities such as hydrogen,oxygen, fluorine, and carbon in the sample C2 is lower than in thesample C1.

Example 5

In this example, verification was conducted to see whether a voidportion generated in an insulating film becomes a path through whichwater, hydrogen, or the like enters. As a method for verification, SIMSwas used.

First, samples are described with reference to FIGS. 23A and 23B. Twokinds of samples were prepared: a sample D1 in FIG. 23A, in which a voidportion is generated by providing an electrode over an oxidesemiconductor film; and a sample D2 in FIG. 23B, in which a void portionis not generated because the electrode is not provided over an oxidesemiconductor film.

A gate insulating film 22 and an oxide semiconductor film 23 were formedover a glass substrate 21, and water, hydrogen, and the like containedin the oxide semiconductor film 23 were released by heat treatment.Here, heat treatment at 450° C. for one hour in a nitrogen atmospherewas performed, and then heat treatment at 450° C. for one hour in anatmosphere of nitrogen and oxygen was performed.

Next, a conductive film was formed over the gate insulating film 22 andthe oxide semiconductor film 23, a mask was formed over the conductivefilm by a photolithography process, and the conductive film was partlyetched using the mask, so that electrodes 24 were formed.

Next, after the substrate was moved to a treatment chamber under reducedpressure and heated at 220° C., the substrate was moved to a treatmentchamber filled with dinitrogen monoxide. Then, the oxide semiconductorfilm was exposed to oxygen plasma which was generated in such a mannerthat an upper electrode provided in the treatment chamber was suppliedwith a high-frequency power of 150 W with the use of a 27.12 MHzhigh-frequency power source.

Example 1 can be referred to for the steps up to here.

Next, the insulating film 27 was formed in succession over the oxidesemiconductor film 23 and electrodes 24 without exposure to theatmosphere after the above plasma treatment. The insulating film 27 hasa stacked-layer structure in which a nitride insulating film 26 isformed over an oxide insulating film 25. The oxide insulating film 25was formed by stacking a 50-nm-thick first silicon oxynitride film 25 aand a 400-nm-thick second silicon oxynitride film 25 b.

The first silicon oxynitride film 25 a was formed by a plasma CVD methodunder the following conditions: silane with a flow rate of 30 sccm anddinitrogen monoxide with a flow rate of 4000 sccm were used as thesource gas; the pressure in a treatment chamber was 40 Pa; the substratetemperature was 220° C.; and a high-frequency power of 150 W wassupplied to parallel plate electrodes.

The second silicon oxynitride film 25 b was formed by a plasma CVDmethod under the following conditions: silane with a flow rate of 160sccm and dinitrogen monoxide with a flow rate of 4000 sccm were used asthe source gas; the pressure in a treatment chamber was 200 Pa; thesubstrate temperature was 220° C.; and a high-frequency power of 1500 Wwas supplied to parallel plate electrodes. Under the above conditions,it is possible to form a silicon oxynitride film which contains moreoxygen than in the stoichiometric composition and from which part ofoxygen is released by heating.

Next, water, hydrogen, and the like contained in the oxide insulatingfilm were released by heat treatment. Here, the heat treatment wasperformed at 350° C. under a mixed atmosphere of nitrogen and oxygen forone hour.

Next, a nitride insulating film 26 was formed over the oxide insulatingfilm 25. As the nitride insulating film 26, a 50-nm-thick siliconnitride film was formed. The silicon nitride film was formed by a plasmaCVD method under the following conditions: silane with a flow rate of 50sccm, nitrogen with a flow rate of 5000 sccm, and ammonia with a flowrate of 100 sccm were used as the source gas; the pressure in atreatment chamber was 200 Pa; the substrate temperature was 220° C.; anda high-frequency power of 2000 W was supplied to parallel plateelectrodes.

In this manner, the sample D1 was manufactured. Further, the sample D2in which the electrode is not formed was manufactured (see FIGS. 23A and23B).

A pressure cooker test (PCT) was performed on the samples D1 and D2. Inthe PCT in this example, the sample D1 and the sample D2 were held for15 hours under the following conditions: the temperature was 130° C.;the humidity was 85% (the volume ratio of water to deuterated water ofwater vapor contained in a gas is H₂O (water):D₂O (deuteratedwater)=4:1); and the atmospheric pressure was 2.0 atm (0.20 MPa).

In this example, a “D atom”, e.g., deuterated water, expresses ahydrogen atom with a mass number of 2 (²H).

As SIMS analysis, substrate side depth profile (SSDP)-SIMS (SIMSmeasurement from a back side) was used to measure concentrations of an Hatom and a D atom in the sample D1 and the sample D2 after the PCT.

FIG. 24A shows H-atom and D-atom concentration profiles obtained by SIMSafter the PCT in the sample D1 and FIG. 24B shows H-atom and D-atomconcentration profiles obtained by SIMS after the PCT in the sample D2.In FIGS. 24A and 24B, a D-atom (natural density) concentration profileis a calculated concentration profile of the D atom existing in nature,which was obtained using the H-atom concentration profile on theassumption that the abundance ratio of the D atom thereto is 0.015%.Therefore, the amount of the D atom mixed into the sample by the PCTequals the difference between the measured D atom concentration and thenatural D atom density.

Comparing the samples D1 and D2, as shown in FIG. 24A, it is found thatthe measured D-atom concentration profile in the oxide semiconductorfilm greatly increases owing to a void portion generated by providing anelectrode over the oxide semiconductor film, so that a large number of Datoms enter the oxide semiconductor film. Therefore, it is confirmedthat the sample D1 has a low barrier property with respect to water (H₂Oand D₂O) from the outside.

EXPLANATION OF REFERENCE

11: silicon wafer, 12: silicon nitride film, 21: glass substrate, 22:gate insulating film, 23: oxide semiconductor film, 24: electrode, 25:oxide insulating film, 25 a: first silicon oxynitride film, 25 b: secondsilicon oxynitride film, 26: nitride insulating film, 27: insulatingfilm, 31: oxide semiconductor film, 32: oxide insulating film, 32 a:oxide insulating film, 32 b: oxide insulating film, 400: substrate, 401:base insulating film, 402: gate electrode, 404: gate insulating film,404 a: gate insulating film, 404 b: gate insulating film, 406:semiconductor film, 407 a: conductive film, 407 b: conductive film, 407c: conductive film, 408 b: drain electrode, 410: oxide insulating film,410 a: oxide insulating film, 410 b: oxide insulating film, 410 c: oxideinsulating film, 410 d: oxide insulating film, 410 e: oxide insulatingfilm, 411: nitride insulating film, 412: insulating film, 413: voidportion, 414: interlayer insulating film, 416: electrode, 450:transistor, 510: oxide insulating film, 510 a: oxide insulating film,510 b: oxide insulating film, 511: nitride insulating film, 512: gateinsulating film, 530: insulating film, 550: transistor, 552: gateelectrode, 560: transistor, 570: transistor, 580: transistor, 601:substrate, 602: photodiode, 606 a: semiconductor film, 606 b:semiconductor film, 606 c: semiconductor film, 608: adhesive layer, 613:substrate, 632: insulating film, 633: planarization film, 634:planarization film, 640: transistor, 641 a: electrode, 641 b: electrode,642: electrode, 643: conductive film, 645: conductive film, 656:transistor, 658: photodiode reset signal line, 659: gate signal line,671: photo sensor output signal line, 672: photo sensor reference signalline, 901: substrate, 902: pixel portion, 903: signal line drivercircuit, 904: scan line driver circuit, 905: sealant, 906: substrate,908: liquid crystal layer, 910: transistor, 911: transistor, 913: liquidcrystal element, 915: connection terminal electrode, 915 a: connectionterminal electrode, 915 b: connection terminal electrode, 916: terminalelectrode, 917: conductive film, 918: FPC, 918 a: FPC, 918 b: FPC, 919:anisotropic conductive agent, 921: interlayer insulating film, 922: gateinsulating film, 923: insulating film, 924: insulating film, 925:sealant, 930: electrode, 931: electrode, 932: insulating film, 933:insulating film, 935: spacer, 936: sealant, 941: electrode, 943: liquidcrystal element, 944: insulating film, 950: silicon nitride film, 951:electrode, 955: connection terminal electrode, 960: partition wall, 963:light-emitting element, 964: filler, 971: source electrode, 973: drainelectrode, 975: common potential line, 977: common electrode, 985:common potential line, 987: common electrode, 9000: table, 9001:housing, 9002: leg portion, 9003: display portion, 9004: displayedbutton, 9005: power cord, 9033: clip, 9034: switch, 9035: power button,9036: switch, 9038: operation button, 9100: television set, 9101:housing, 9103: display portion, 9105: stand, 9107: display portion,9109: operation key, 9110: remote controller, 9201: main body, 9202:housing, 9203: display portion, 9204: keyboard, 9205: externalconnection port, 9206: pointing device, 9630: housing, 9631: displayportion, 9631 a: display portion, 9631 b: display portion, 9632 a:region, 9632 b: region, 9633: solar battery, 9634: charge and dischargecontrol circuit, 9635: battery, 9636: DCDC converter, 9637: converter,9638: operation key, 9639: button.

This application is based on Japanese Patent Application serial no.2012-161688 filed with Japan Patent Office on Jul. 20, 2012, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A semiconductor device comprising: a gate electrode; anoxide semiconductor film; a gate insulating film between the gateelectrode and the oxide semiconductor film; a source electrode and adrain electrode over the oxide semiconductor film; an oxide insulatingfilm over the oxide semiconductor film, the source electrode, and thedrain electrode; a nitride insulating film over the oxide insulatingfilm; and a pixel electrode over the nitride insulating film, whereinthe oxide insulating film is in contact with the oxide semiconductorfilm, wherein the oxide insulating film comprises a low-density region,wherein the nitride insulating film is in contact with the oxideinsulating film and covers the low-density region of the oxideinsulating film, wherein the pixel electrode is electrically connectedto one of the source electrode and the drain electrode through anopening in the oxide insulating film and the nitride insulating film,and wherein the oxide semiconductor film comprises a crystal.
 3. Thesemiconductor device according to claim 2, wherein the crystal has asize greater than or equal to 1 nm and less than 10 nm.
 4. Thesemiconductor device according to claim 2, wherein the oxide insulatingfilm comprises a silicon oxide film, and wherein the nitride insulatingfilm comprises a silicon nitride film.
 5. The semiconductor deviceaccording to claim 2, wherein the oxide insulating film comprises asilicon oxynitride film, and wherein the nitride insulating filmcomprises a silicon nitride film.
 6. The semiconductor device accordingto claim 2, wherein the oxide insulating film has a density higher thanor equal to 2.26 g/cm³ and lower than or equal to 2.50 g/cm³.
 7. Asemiconductor device comprising: a gate electrode; a gate insulatingfilm over the gate electrode; an oxide semiconductor film over the gateinsulating film; a source electrode and a drain electrode over the oxidesemiconductor film; an oxide insulating film over the oxidesemiconductor film, the source electrode, and the drain electrode; anitride insulating film over the oxide insulating film; and a pixelelectrode over the nitride insulating film, wherein the oxide insulatingfilm is in contact with the oxide semiconductor film, wherein the oxideinsulating film comprises a low-density region, wherein the nitrideinsulating film is in contact with the oxide insulating film and coversthe low-density region of the oxide insulating film, wherein the pixelelectrode is electrically connected to one of the source electrode andthe drain electrode through an opening in the oxide insulating film andthe nitride insulating film, wherein the oxide semiconductor filmcomprises a crystal, and wherein a hydrogen concentration in the oxidesemiconductor film is lower than 5×10¹⁸ atoms/cm³.
 8. The semiconductordevice according to claim 7, wherein the crystal has a size greater thanor equal to 1 nm and less than 10 nm.
 9. The semiconductor deviceaccording to claim 7, wherein the oxide insulating film comprises asilicon oxide film, and wherein the nitride insulating film comprises asilicon nitride film.
 10. The semiconductor device according to claim 7,wherein the oxide insulating film comprises a silicon oxynitride film,and wherein the nitride insulating film comprises a silicon nitridefilm.
 11. The semiconductor device according to claim 7, wherein theoxide insulating film has a density higher than or equal to 2.26 g/cm³and lower than or equal to 2.50 g/cm³.